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1. WO2004008453 - METHOD FOR STORING AND/OR READING INFORMATION IN/OUT OF A FERROELECTRIC MATERIAL

Publication Number WO/2004/008453
Publication Date 22.01.2004
International Application No. PCT/EP2003/007650
International Filing Date 15.07.2003
Chapter 2 Demand Filed 17.03.2004
IPC
G11B 9/00 2006.01
GPHYSICS
11INFORMATION STORAGE
BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
9Recording or reproducing using a method or means not covered by one of the main groups G11B3/-G11B7/139; Record carriers therefor
G11B 9/02 2006.01
GPHYSICS
11INFORMATION STORAGE
BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
9Recording or reproducing using a method or means not covered by one of the main groups G11B3/-G11B7/139; Record carriers therefor
02using ferroelectric record carriers; Record carriers therefor
G11B 11/00 2006.01
GPHYSICS
11INFORMATION STORAGE
BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
11Recording on, or reproducing from, the same record carrier wherein for these two operations the methods or means are covered by different main groups of groups G11B3/-G11B7/212; Record carriers therefor
G11B 11/16 2006.01
GPHYSICS
11INFORMATION STORAGE
BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
11Recording on, or reproducing from, the same record carrier wherein for these two operations the methods or means are covered by different main groups of groups G11B3/-G11B7/212; Record carriers therefor
16using recording by mechanical cutting, deforming or pressing
CPC
B82Y 10/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
10Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
G11B 11/007
GPHYSICS
11INFORMATION STORAGE
BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
11Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
002using recording by perturbation of the physical or electrical structure
007with reproducing by means directly associated with the tip of a microscopic electrical probe as defined in G11B9/14
G11B 11/16
GPHYSICS
11INFORMATION STORAGE
BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
11Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
16using recording by mechanical cutting, deforming or pressing
G11B 9/02
GPHYSICS
11INFORMATION STORAGE
BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
9Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
02using ferroelectric record carriers; Record carriers therefor
G11B 9/14
GPHYSICS
11INFORMATION STORAGE
BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
9Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
12using near-field interactions; Record carriers therefor
14using microscopic probe means ; , i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
G11B 9/1409
GPHYSICS
11INFORMATION STORAGE
BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
9Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
12using near-field interactions; Record carriers therefor
14using microscopic probe means ; , i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
1409Heads
Applicants
  • INFINEON TECHNOLOGIES AG [DE]/[DE] (AllExceptUS)
  • SCHINDLER, Günther [DE]/[DE] (UsOnly)
  • VOGEL, Markus [DE]/[DE] (UsOnly)
  • ZYBILL, Christian, Erich [DE]/[DE] (UsOnly)
Inventors
  • SCHINDLER, Günther
  • VOGEL, Markus
  • ZYBILL, Christian, Erich
Agents
  • ZIMMERMANN & PARTNER
Priority Data
102 32 386.017.07.2002DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) VERFAHREN ZUM SPEICHERN UND/ODER ZUM AUSLESEN VON INFORMATIONEN IN/AUS EINEM FERROELEKTRISCHEN MATERIAL
(EN) METHOD FOR STORING AND/OR READING INFORMATION IN/OUT OF A FERROELECTRIC MATERIAL
(FR) PROCEDE DE STOCKAGE D'INFORMATIONS DANS UN MATERIAU FERROELECTRIQUE ET/OU DE LECTURE D'INFORMATIONS A PARTIR DE CE MATERIAU FERROELECTRIQUE
Abstract
(DE)
Zum Speichern von Information in einem ferroelektrischen Material (2) wird mittels einerProbensonde (6) mechanisch auf einzelne Domänen (4b) eingewirkt und dadurch einePolarisationsumkehr der einzelnen Domänen hervorgerufen, wobei zur Stabilisierung der Polarisationsänderung/-umkehr unterhalb des ferroelektrischen Materials befindlicheElektroden (30a, 30b) mit einer Vorspannung (Ua, Ub) beaufschlagt werden können.Mit der Polarisationsumkehr tritt eine Veränderung der Oberflächentopographie desferroelektrischen Materials (2) auf, die zum Auslesen der Information herangezogenwerden kann. Die eingespeicherte Information wird daher durch Ermittlung derOberflächentopographie des ferroelektrischen Materials gewonnen. Das Einschreibenund Auslesen der Information erfolgt mittels einer AFM-Spitze, wobei zum Einschreibendie Spitze im contact oder tapping mode, zum Auslesen zusätzlich auch im non-contactbetrieben werden kann.
(EN)
Disclosed is a method for storing information in a ferroelectric material (2), according to which individual domains (4b) are acted upon in a mechanical manner by means of a sampling probe (6) so as to reverse the polarization thereof. Electrodes (30a, 30b) which are located below the ferroelectric material can be impinged upon by a bias (Ua, Ub) in order to stabilize the polarization modification/reversal. The surface topography of the ferroelectric material (2), which can be used for reading the information, is modified as a result of the polarization reversal. The stored information is consequently retrieved by determining the surface topography of the ferroelectric material. Information is written and read by means of an AFM tip which can be operated in a contact mode or tapping mode for writing while being additionally operable in a non-contact mode for reading.
(FR)
Selon l'invention, pour stocker des informations dans un matériau ferroélectrique (2) on agit au moyen d'une sonde (6) mécaniquement sur différents domaines (4b) et l'on provoque ainsi une inversion de polarisation des divers domaines. Pour la stabilisation de la modification/inversion de polarisation, des électrodes (30a, 30b) situées en-dessous du matériau ferroélectrique peuvent être soumises à une tension de polarisation (Ua, Ub). En même temps que l'inversion de polarisation se produit une modification de la topographie superficielle du matériau ferroélectrique (2), laquelle peut être exploitée pour la lecture des informations. Les informations stockées sont par conséquent obtenues par détermination de la topographie superficielle du matériau ferroélectrique. Le stockage et la lecture des informations se fait au moyen d'une pointe AFM. Pour le stockage, la pointe peut être utilisée en mode contact ou frappe, et pour la lecture elle peut en plus être utilisée en mode sans contact.
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