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Machine translation
1. (WO2004008250) PATTERNED SUBSTRATES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2004/008250    International Application No.:    PCT/GB2003/002990
Publication Date: 22.01.2004 International Filing Date: 10.07.2003
IPC:
G03F 7/004 (2006.01), G03F 7/075 (2006.01), G03F 7/16 (2006.01)
Applicants: CAMBRIDGE UNIVERSITY TECHNICAL SERVICES LIMITED [GB/GB]; 16 Mill Lane, Cambridge, Cambridgeshire CB2 1SB (GB) (For All Designated States Except US).
HUCK, Wilhelm, T., S. [NL/GB]; (GB) (For US Only).
LUSCOMBE, Christine, K. [JP/GB]; (GB) (For US Only).
HOLMES, Andrew, Bruce [AU/GB]; (GB) (For US Only)
Inventors: HUCK, Wilhelm, T., S.; (GB).
LUSCOMBE, Christine, K.; (GB).
HOLMES, Andrew, Bruce; (GB)
Agent: ANDREWS, Timothy, Stephen; Marks & Clerk, 66/68 Hills Road, Cambridge, Cambridgeshire CB2 1LA (GB)
Priority Data:
0215994.5 10.07.2002 GB
Title (EN) PATTERNED SUBSTRATES
(FR) SUBSTRATS A CONTOURS MODELES
Abstract: front page image
(EN)A method is provided for the deposition and patterning of an organosilane on a substrate, which comprises the steps of : (i) forming a self-assembled monolayer of said organosilane on said substrate by depositing said organosilane on said substrate using compressed carbon dioxide as the solvent for said organosilane; and (ii) patterning the organosilane self-assembled monolayer thus formed using a patterning technique that does not use a solvent to give the desired pattern. A process for the patterned etching of a substrate comprising treating with an etchant a substrate patterned with an organosilane self-assembled monolayer produced according to said method of patterened deposition is also provided, as is an electronic, optical or electro-optical device comprising a layer of an etched substrate produced according to said process.
(FR)La présente invention a trait à un procédé permettant le dépôt et le modelage en contours d'un organosilane sur un substrat, comportant les étapes suivantes : (i) la formation d'une monocouche autoassemblée dudit organosilane sur ledit substrat par le dépôt dudit organosilane sur ledit substrat au moyen de gaz carbonique comprimé comme solvant pour ledit organosilane ; et (ii) le modelage de la monocouche autoassemblée d'organosilane ainsi formée au moyen d'une technique de modelage de contours qui n'utilise pas un solvant pour obtenir le modelage souhaité. L'invention a trait également à un procédé pour la gravure en modelage de contours d'un substrat comprenant le traitement au moyen d'un agent de gravure d'un substrat conformé avec une couche autoassemblée d'organosilane obtenu selon le dépôt structuré, tel que dans un dispositif électronique, optique ou électro-optique comportant une couche d'un substrat gravé obtenu selon ledit procédé.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SD, SE, SG, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)