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1. WO2004007192 - ANTIREFLECTIVE SILICON-CONTAINING COMPOSITIONS AS HARDMASK LAYER

Publication Number WO/2004/007192
Publication Date 22.01.2004
International Application No. PCT/US2002/022176
International Filing Date 11.07.2002
Chapter 2 Demand Filed 23.01.2003
IPC
G03F 7/075 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
075Silicon-containing compounds
G03F 7/09 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
09characterised by structural details, e.g. supports, auxiliary layers
CPC
C08G 77/20
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
77Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
04Polysiloxanes
20containing silicon bound to unsaturated aliphatic groups
C08G 77/38
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
77Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
04Polysiloxanes
38Polysiloxanes modified by chemical after-treatment
G03F 7/0757
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
075Silicon-containing compounds
0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
G03F 7/091
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
09characterised by structural details, e.g. supports, auxiliary layers
091characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
Y10S 430/151
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
430Radiation imagery chemistry: process, composition, or product thereof
151Matting or other surface reflectivity altering material
Applicants
  • INTERNATIONAL BUSINESS MACHINES CORPORATION [US]/[US]
Inventors
  • ANGELOPOULOS, Marie
  • ARIRAM, Ari
  • GUARNIERI, C., Richard
  • HUANG, Wu-Song
  • KWONG, Ranee
  • MOREAU, Wayne, M.
Agents
  • CAPELLA, Steven
Priority Data
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) ANTIREFLECTIVE SILICON-CONTAINING COMPOSITIONS AS HARDMASK LAYER
(FR) COMPOSITIONS ANTIREFLET CONTENANT DU SILICIUM POUR COUCHE DE MASQUE DUR
Abstract
(EN)
Antireflective compositions characterized by the presence of an SiO-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions are especially useful in lithographic processes used to configure underlying material layers on a substrate, especially metal or semiconductor layers.
(FR)
L'invention concerne des compositions antireflet caractérisées par la présence d'un polymère contenant du SiO et possédant des fractions chromophores pendantes, qui sont des compositions de revêtement antireflet/masque dur efficaces pour les processus lithographiques. Ces compositions présentent des propriétés, optiques, mécaniques et de sélectivité de gravure exceptionnelles, et peuvent être appliquées au moyen de techniques de dépôt par rotation. Ces compositions sont particulièrement indiquées pour les processus lithographiques utilisés pour configurer les couches de matériaux sous-jacentes sur un substrat, en particulier le couches de métaux ou de semi-conducteurs.
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