WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2004006429) SEMICONDUCTOR INTEGRATED CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT MANUFACTURING METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2004/006429    International Application No.:    PCT/JP2003/008227
Publication Date: 15.01.2004 International Filing Date: 27.06.2003
Chapter 2 Demand Filed:    27.01.2004    
IPC:
H03F 1/22 (2006.01), H03F 3/193 (2006.01)
Applicants: KABUSHIKI KAISHA TOYOTA JIDOSHOKKI [JP/JP]; 2-1, Toyoda-cho, Kariya-shi, Aichi 448-8671 (JP) (For All Designated States Except US).
NIIGATA SEIMITSU CO., LTD. [JP/JP]; 5-13, Nishishirocho 2-chome, Joetsu-shi, Niigata 943-0834 (JP) (For All Designated States Except US).
MIYAGI, Hiroshi [JP/JP]; (JP) (For US Only)
Inventors: MIYAGI, Hiroshi; (JP)
Agent: OSUGA, Yoshiyuki; 3rd Fl., Nibancho Bldg., 8-20, Nibancho, Chiyoda-ku, Tokyo 102-0084 (JP)
Priority Data:
2002-198928 08.07.2002 JP
Title (EN) SEMICONDUCTOR INTEGRATED CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT MANUFACTURING METHOD
(FR) CIRCUIT INTEGRE SEMICONDUCTEUR ET PROCEDE DE FABRICATION DE CIRCUIT INTEGRE SEMICONDUCTEUR
(JA) 半導体集積回路及び半導体集積回路の製造方法
Abstract: front page image
(EN)An RF amplifier circuit (21) for amplifying AM broadcast signals is constituted by use of cascaded P channel MOSFETs (4,5). This cascade connection realizes a reduction of the feedback capacitance between the source and gate of the P channel MOSFET (4), thereby providing a stable operation. Further, using the P channel MOSFETs to constitute the amplifier circuit realizes a reduction of flicker noise and allows the amplifier circuit to be manufactured by the same CMOS process as the CMOS digital circuit.
(FR)Un circuit (21) d'amplificateur RF destiné à amplifier des signaux de diffusion AM est constitué de transistors MOSFET (4, 5) canal P montés en cascade. Cette connexion en cascade réalise une réduction de la capacitance de réaction entre la source et la grille du transistor MOSFET (4) canal P, permettant ainsi un fonctionnement stable. Par ailleurs, l'utilisation de transistors MOSFET canal P pour constituer le circuit amplificateur permet une réduction du bruit en 1/c et permet une fabrication de ce circuit amplificateur par le même processus CMOS que le circuit numérique CMOS.
(JA) AM放送信号を増幅するRF増幅回路21を、カスコード接続されたPチャネルMOSFET4及び5で構成する。カスコード接続することでPチャネルMOSFET4のソース、ゲート間の帰還容量を小さくし、安定に動作させることができる。さらに、AM放送信号の増幅回路をPチャネルMOSFETで構成することで、フリッカ雑音を低減し、かつCMOSデジタル回路と同じCMOSプロセスで製造することができる。
Designated States: CN, KR, US.
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PT, RO, SE, SI, SK, TR).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)