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1. (WO2004006293) METHOD OF ANNEALING ELECTRICALLY CONDUCTIVE ZINC OXIDE FILMS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2004/006293    International Application No.:    PCT/US2002/025350
Publication Date: 15.01.2004 International Filing Date: 12.08.2002
IPC:
C23C 16/40 (2006.01), C23C 16/56 (2006.01)
Applicants: MICROCOATING TECHNOLOGIES, INC. [US/US]; 5315 Peachtree Industrial Blvd., Atlanta, GA 30341 (US) (For All Designated States Except US).
ZHAO, Zhiyong [CN/US]; (US) (For US Only).
HUNT, Andrew, T. [US/US]; (US) (For US Only).
VINSON, Matthew, Scott [US/US]; (US) (For US Only).
MCENTYRE, Eric, J. [US/US]; (US) (For US Only)
Inventors: ZHAO, Zhiyong; (US).
HUNT, Andrew, T.; (US).
VINSON, Matthew, Scott; (US).
MCENTYRE, Eric, J.; (US)
Agent: NACKER, Wayne, E.; 5315 Peachtree Industrial Blvd., Atlanta, GA 30341 (US)
Priority Data:
60/312,533 15.08.2001 US
Title (EN) METHOD OF ANNEALING ELECTRICALLY CONDUCTIVE ZINC OXIDE FILMS
(FR) PROCEDE DE RECUIT DE FILMS D'OXYDE DE ZINC ELECTRO-CONDUCTEURS
Abstract: front page image
(EN)The electrical conductivity of a zinc oxide layer (15) is improved by annealing (15) the layer at a temperature of between about 500°C and about 600°C in an inert atmosphere having sufficient levels of entrained ZnO to permit reduction of oxygen levels in the lattice structure of the zinc oxide layer (15) while maintaining zinc levels in the lattice structure.
(FR)La conductivité électrique d'une couche d'oxyde de zinc est améliorée par recuit de la couche à une température comprise entre environ 500 °C et environ 600 °C en atmosphère inerte ayant des teneurs en ZnO suffisantes pour permettre la réduction des niveaux d'oxygène dans la structure réticulaire de la couche d'oxyde de zinc, tout en maintenant les teneurs en zinc dans la structure réticulaire.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, OM, PH, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)