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1. (WO2004006278) NANOSTRUCTURE FIELD EMISSION CATHODE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2004/006278    International Application No.:    PCT/US2002/016423
Publication Date: 15.01.2004 International Filing Date: 28.05.2002
IPC:
B81C 1/00 (2006.01), H01J 9/02 (2006.01)
Applicants: UT-BATTELLE, LLC [US/US]; Oak Ridge National Laboratory, Bethel Valley Road, P.O. Box 2008, Oak Ridge, TN 37831-6255 (US) (For All Designated States Except US).
GUILLORN, Michael, A. [US/US]; (US) (For US Only).
SIMPSON, Michael, L. [US/US]; (US) (For US Only).
MERKULOV, Vladimir, I. [RU/US]; (US) (For US Only).
MELECHKO, Anatoli, V. [RU/US]; (US) (For US Only).
LOWNDES, Douglas, H. [US/US]; (US) (For US Only)
Inventors: GUILLORN, Michael, A.; (US).
SIMPSON, Michael, L.; (US).
MERKULOV, Vladimir, I.; (US).
MELECHKO, Anatoli, V.; (US).
LOWNDES, Douglas, H.; (US)
Agent: BRUCKNER, John, J.; 1221 S. MoPac Expressway, Suite 400, Austin, TX 78746-6875 (US)
Priority Data:
60/293,780 25.05.2001 US
  24.05.2002 US
Title (EN) NANOSTRUCTURE FIELD EMISSION CATHODE
(FR) FABRICATION D'UNE GRILLE COUPLE A UN MATERIAU CATHODIQUE A EMISSION DE CHAMP SUR UNE NANOSTRUCTURE A L'INTERIEUR D'UN DISPOSITIF
Abstract: front page image
(EN)Gated field emission devices and systems and methods for their fabrication are described. A method includes growing a substantially vertically aligned carbon nanostructure (720), the substantially vertically aligned carbon nanostructure (720) coupled to a substrate; covering at least a portion of the substantially vertically aligned carbon nanostructure (720) with a dielectric; forming a gate, the gate coupled to the dielectric; and releasing the substantially vertically aligned carbon nanostructure (720) by forming an aperture in the gate and removing a portion of the dielectric.
(FR)L'invention concerne des dispositifs et des systèmes protégés à émission de champ, et leurs procédés de fabrication. Un procédé consiste à: croître une nanostructure en carbone à alignement sensiblement vertical (720) couplée à un substrat; couvrir au moins une partie de la nanostructure en carbone à alignement sensiblement vertical (720) d'un diélectrique; former une grille couplée au diélectrique; et libérer la nanostructure en carbone à alignement sensiblement vertical (720) en ménageant une ouverture dans la grille et en retirant une partie du diélectrique.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, OM, PH, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)