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Machine translation
1. (WO2004006016) MASK AND MANUFACTURING METHOD USING MASK
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2004/006016    International Application No.:    PCT/IB2003/002939
Publication Date: 15.01.2004 International Filing Date: 13.06.2003
IPC:
G03F 1/00 (2012.01), H01L 21/027 (2006.01)
Applicants: KONINKLIJKE PHILIPS ELECTRONICS N.V. [NL/NL]; Groenewoudseweg 1, NL-5621 BA Eindhoven (NL) (For All Designated States Except US).
FRENCH, Ian, D. [GB/GB]; (GB) (For US Only).
HEWETT, James [GB/GB]; (GB) (For US Only)
Inventors: FRENCH, Ian, D.; (GB).
HEWETT, James; (GB)
Agent: SHARROCK, Daniel, J.; Philips Intellectual Property & Standards, Cross Oak Lane, Redhill, Surrey RH1 5HA (GB)
Priority Data:
0215243.7 02.07.2002 GB
Title (EN) MASK AND MANUFACTURING METHOD USING MASK
(FR) MASQUE ET PROCEDE DE FABRICATION L'UTILISANT
Abstract: front page image
(EN)A mask 12 includes half-tone layer 16 and light blocking layer 20. The half-tone layer 16 is of silicon rich silicon nitride SiNx:H. x may be in the range 0 to 1, preferably 0.2 to 0.6, so that the optical band gap can be in the range 2.1eV to 2.5eV. It has been discovered that photoresist removal when the mask 12 is used is very dependent on the band gap, and not too dependent on the thickness, so good control of TFT manufacture can be obtained.
(FR)L'invention porte sur un masque (12) comportant une couche en demi-teinte (16) et une couche d'arrêt de la lumière (20). La couche en demi-teinte (16) est en nitrure de silicium enrichi en silicium, de formule SiNx:H, dans laquelle x peut être de 0 à 1, et de préférence de 0,2 à 0,6, ce qui fait que la bande interdite peut être comprise entre 2,1 ev et 2,5 ev. On a découvert que l'élimination de la réserve lors de l'utilisation du masque dépend fortement de la bande interdite et peu de l'épaisseur, ce qui permet une bonne maîtrise de la fabrication des transistors en couche mince.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NI, NO, NZ, OM, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)