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Pub. No.:    WO/2004/004018    International Application No.:    PCT/JP2003/006234
Publication Date: 08.01.2004 International Filing Date: 19.05.2003
H01L 21/28 (2006.01), H01L 33/04 (2010.01), H01L 33/10 (2010.01), H01L 33/12 (2010.01), H01L 33/28 (2010.01), H01L 33/40 (2010.01)
Applicants: SUMITOMO ELECTRIC INDUSTRIES, LTD. [JP/JP]; 5-33, Kitahama 4-chome, Chuo-ku, Osaka-shi, Osaka 541-0041 (JP) (For All Designated States Except US).
NAKAMURA, Takao [JP/JP]; (JP) (For US Only).
FUJIWARA, Shinsuke [JP/JP]; (JP) (For US Only).
MATSUBARA, Hideki [JP/JP]; (JP) (For US Only)
Inventors: NAKAMURA, Takao; (JP).
FUJIWARA, Shinsuke; (JP).
Agent: NAKANO, Minoru; c/o Sumitomo Electric Industries, Ltd., 1-3, Shimaya 1-chome, Konohana-ku, Osaka-shi, Osaka 554-0024 (JP)
Priority Data:
2002-190236 28.06.2002 JP
(JA) 半導体発光素子
Abstract: front page image
(EN)A ZnSe light-emitting device emitting light from an output face comprises an n-type ZnSe substrate including self-active luminescence centers (SA), an active layer formed on the n-type ZnSe substrate, and an Al layer provided the opposite side to the output face and serving to reflect light toward the output face. The emitted light is effectively used, the luminance is high, and the chromaticity of the white light-emitting device can be easily adjusted.
(FR)L'invention concerne un dispositif électroluminescent à base de ZnSe émettant de la lumière à partir d'une face de sortie d'une face de sortie, comprenant un substrat ZnSe du type n doté de centres luminescents auto-actifs, une couche active formée sur le substrat ZnSe du type n, et une couche Al opposée à la face de sortie et servant à réfléchir la lumière vers ladite face de sortie. La lumière émise est effectivement utilisée, la luminance est élevée et la chromaticité du dispositif émettant une lumière blanche peut être facilement réglée.
(JA) 出射面から光を外部に出射するZnSe系発光素子であって、自己活性発光中心SAを含むn型ZnSe基板と、n型ZnSe基板の上に形成された活性層と、出射面と反対側の面に位置し、光を出射面側に反射するAl層とを備えることにより、発生した光を有効に活用し、高輝度で、かつ白色の発光素子の色度の調整を容易にできるZnSe系発光素子を提供する。
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NI, NO, NZ, OM, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)