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1. (WO2004004011) METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR STRUCTURE COMPRISING A PLURALITY OF GATE STACKS ON A SEMICONDUCTOR SUBSTRATE, AND CORRESPONDING SEMICONDUCTOR STRUCTURE

Pub. No.:    WO/2004/004011    International Application No.:    PCT/EP2003/005581
Publication Date: Jan 8, 2004 International Filing Date: May 27, 2003
IPC: H01L 21/8242
H01L 27/108
Applicants: INFINEON TECHNOLOGIES AG
AMON, Jürgen
FAUL, Jürgen
RUDER, Thomas
SCHUSTER, Thomas
Inventors: AMON, Jürgen
FAUL, Jürgen
RUDER, Thomas
SCHUSTER, Thomas
Title: METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR STRUCTURE COMPRISING A PLURALITY OF GATE STACKS ON A SEMICONDUCTOR SUBSTRATE, AND CORRESPONDING SEMICONDUCTOR STRUCTURE
Abstract:
The invention relates to a method for producing a semiconductor structure comprising a plurality of gate stacks (GS1-GS8) on a semiconductor substrate (1), each of said gate stacks (GS1-GS8) being used as control electrodes for a selector transistor of a respective memory cell that is provided with a storage capacitor (TK1-TK4). The inventive method comprises the following steps: the gate stacks (GS1-GS8) are disposed next to each other on the semiconductor substrate (1) which is provided with a gate dielectric (5); a sidewall oxide (40) is formed on bare sidewalls of the gate stacks (GS1-GS8); and the sidewall oxide (40) is at least partly removed from the sidewalls of the gate stacks (GS1-GS8) that are used as a control electrode, said sidewalls being located opposite the associated storage capacitor (TK1-TK4). The invention also relates to a corresponding semiconductor structure.