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1. (WO2004004003) MULTILAYER SUBSTRATE METALLIZATION FOR IC INTERCONNECTION
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2004/004003    International Application No.:    PCT/SG2003/000154
Publication Date: 08.01.2004 International Filing Date: 26.06.2003
Chapter 2 Demand Filed:    18.09.2003    
IPC:
H01L 21/60 (2006.01), H01L 23/498 (2006.01)
Applicants: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH [SG/SG]; 20 Biopolis Way, #07-01, Centros, Singapore 138668 (SG) (For All Designated States Except US).
ZHANG, Fan [CN/SG]; (SG) (For US Only).
LI, Ming [GB/CN]; (CN) (For US Only)
Inventors: ZHANG, Fan; (SG).
LI, Ming; (CN)
Agent: KOH, Patsy; Arthur Loke & Partners, Suntec Tower Two, 9 Temasek Boulevard #23-01, Singapore 038989 (SG)
Priority Data:
200203893-3 27.06.2002 SG
Title (EN) MULTILAYER SUBSTRATE METALLIZATION FOR IC INTERCONNECTION
(FR) METALLISATION D'UN SUBSTRAT MULTICOUCHES POUR L'INTERCONNEXION DE CIRCUITS INTEGRES (IC)
Abstract: front page image
(EN)A substrate metallization for soldering, with a Pb-free solder or a eutectic SnPb solder (4), to a thin film under-bump-metallization (UBM) of a Si die, comprising: a substrate (1), a layer of Cu (20) formed on a portion of the substrate (1), a layer of Ni (21) formed on the Cu layer (20), an oxidation protection layer (22), and a Ni-barrier layer (23), between the Ni layer (21)and the oxidation protection layer (22), adapted to inhibit diffusion of Ni from the Ni layer (21) to the solder (4) during a reflow process or during high temperature storage.
(FR)L'invention porte sur une métallisation de substrat en vue du soudage, au moyen d'une soudure sans Pb ou d'une soudure de SnPb eutectique (4), à une métallisation sous-jacente de film mince (UBM) d'une matrice de Si, comprenant: un substrat (1), une couche de Cu (20) formée sur une partie du substrat (1), une couche de Ni (21) formée sur la couche de Cu (20), une couche protectrice d'oxydation (22), et une couche barrière de Ni (23), entre la couche de Ni (21) et la couche protectrice d'oxydation (22), conçue de manière à inhiber la diffusion de Ni à partir de la couche de Ni (21) vers la soudure (4) au cours d'un procédé de refusion ou pendant le stockage à température élevée.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RU, SC, SD, SE, SK, SL, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)