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1. (WO2004003990) METHOD OF MANUFACTURING CMOS DEVICES BY THE IMPLANTATION OF N- AND P-TYPE CLUSTER IONS AND NEGATIVE IONS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2004/003990    International Application No.:    PCT/US2003/017839
Publication Date: 08.01.2004 International Filing Date: 06.06.2003
IPC:
H01L 21/265 (2006.01), H01L 21/425 (2006.01), H01L 21/8238 (2006.01)
Applicants: SEMEQUIP, INC. [US/US]; 34 Sullivan Road, Unit 21, Billerica, MA 01862 (US) (For All Designated States Except US).
HORSKY, Thomas, N. [US/US]; (US) (For US Only).
JACOBSON, Dale, C. [US/US]; (US) (For US Only).
KRULL, Wade, A. [US/US]; (US) (For US Only)
Inventors: HORSKY, Thomas, N.; (US).
JACOBSON, Dale, C.; (US).
KRULL, Wade, A.; (US)
Agent: PANIAGUAS, John, S.; Katten Muchin Zavis Rosenman, 525 West Monroe, Suite 1600, Chicago, IL 60661-3693 (US)
Priority Data:
60/392,271 26.06.2002 US
60/391,847 26.06.2002 US
10/251,491 20.09.2002 US
Title (EN) METHOD OF MANUFACTURING CMOS DEVICES BY THE IMPLANTATION OF N- AND P-TYPE CLUSTER IONS AND NEGATIVE IONS
(FR) PROCEDE DE FABRICATION DE DISPOSITIFS CMOS PAR IMPLANTATION D'IONS EN GRAPPES DE TYPE N ET P ET D'IONS NEGATIFS
Abstract: front page image
(EN)An ion implantation system (10) is described for the implantation of cluster ions into semiconductoe substrates for semiconductor device manufacturing. A method of manufacturing a semiconductor device is described, wherein clusters of N-and P-type dopants are implanted to form the transistor in CMOS devices. For example, As4Hx+ clusters and either B10Hx or B10HX+ clusters are used as sources of As and B doping, respectively, during the implants. An ion implantation system (10) is described for the implantation of cluster ions into semiconducteur substrates for semiconductor device manufacturing.
(FR)L'invention concerne un système (10) d'implantation d'ions en grappes dans des substrats semi-conducteurs pour la fabrication de dispositif semi-conducteur. Elle concerne aussi un procédé de fabrication d'un dispositif semi-conducteur dans lequel des grappes de dopants de types P et N sont implantées afin de former les structures de transistor dans des dispositifs CMOS. On utilise, par exemple, des grappes As4Hx et de B10Hx-, ou de B10Hx+, comme sources de dopage respectivement d'As et de B, lors des implantations. L'invention concerne aussi un système d'implantation d'ions (10) destiné à implanter des ions en grappes dans des substrats semi-conducteurs pour la fabrication de dispositif semi-conducteur.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, OM, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)