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Machine translation
1. (WO2004003966) HIGH DENSITY SEMICONDUCTOR MEMORY CELL AND MEMORY ARRAY USING A SINGLE TRANSISTOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2004/003966    International Application No.:    PCT/US2003/012843
Publication Date: 08.01.2004 International Filing Date: 22.04.2003
IPC:
H01L 29/94 (2006.01), H01L 31/062 (2006.01)
Applicants: KILOPASS TECHNOLOGIES, INC. [US/US]; 1031 East Duane Avenue, Sunnyvale, CA 94085 (US)
Inventors: PENG, Jack, Zezhong; (US).
FONG, David; (US)
Agent: NG, Chun, M.; Perkins Coie LLP, Patent - SEA, P.O. Box 1247, Seattle, WA 98111-1247 (US)
Priority Data:
10/133,704 26.04.2002 US
Title (EN) HIGH DENSITY SEMICONDUCTOR MEMORY CELL AND MEMORY ARRAY USING A SINGLE TRANSISTOR
(FR) CELLULE MEMOIRE SEMI-CONDUCTRICE HAUTE DENSITE ET RESEAU MEMOIRE UTILISANT UN SEUL TRANSISTOR
Abstract: front page image
(EN)A programmable memory cell (102-Figure 1) comprised of a transistor (104) located at the crosspoint of a column bitline and a row wordline is disclosed. The transistor has its gate (310-Figure 3) formed from the column bitline and its source (306) connected to the row wordline. The memory cell is programmed by applying a voltage potential between the column bitline and the row wordline to produce a programmed n+ region (501-Figure 5) in the substrate underlying the gate of the transistor.
(FR)L'invention concerne une cellule mémoire programmable constituée d'un transistor disposé au croisement d'une ligne de bit en colonne et d'une ligne de mot en rangée. La grille du transistor est formée de la ligne de bit en colonne et sa source est connectée à la ligne de mot en rangée. La cellule mémoire est programmée par application d'une tension entre la ligne de bit en colonne et la ligne de mot en rangée afin de produire une région n+ programmée dans le substrat sous-jacent à la grille du transistor.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NI, NO, NZ, OM, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, TJ, TM, TN, TR, TT, TZ, UA, UG, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)