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Machine translation
1. (WO2004003261) PROCESS FOR OBTAINING OF BULK MONOCRYSTALLLINE GALLIUM-CONTAINING NITRIDE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2004/003261    International Application No.:    PCT/PL2003/000040
Publication Date: 08.01.2004 International Filing Date: 17.04.2003
Chapter 2 Demand Filed:    15.01.2004    
IPC:
C30B 9/00 (2006.01)
Applicants: AMMONO Sp. z o.o. [PL/PL]; Czerwonego Krzyza 2/31, PL-00-377 Warszawa (PL) (For All Designated States Except US).
NICHIA CORPORATION [JP/JP]; 491-100 Oka, Kaminaka-cho, Anan-shi, Tokushima 774-8601 (JP) (For All Designated States Except US).
DWILINSKI, Robert [PL/PL]; (PL) (For US Only).
DORADZINSKI, Roman [PL/PL]; (PL) (For US Only).
GARCZYNSKI, Jerzy [PL/PL]; (PL) (For US Only).
SIERZPUTOWSKI, Leszek, P. [PL/PL]; (PL) (For US Only).
KANBARA, Yasuo [JP/JP]; (JP) (For US Only)
Inventors: DWILINSKI, Robert; (PL).
DORADZINSKI, Roman; (PL).
GARCZYNSKI, Jerzy; (PL).
SIERZPUTOWSKI, Leszek, P.; (PL).
KANBARA, Yasuo; (JP)
Agent: MALEWSKA, Ewa; Klaudyny 32/299, PL-01-684 Warszawa (PL)
Priority Data:
P-354740 26.06.2002 PL
P-357697 11.12.2002 PL
Title (EN) PROCESS FOR OBTAINING OF BULK MONOCRYSTALLLINE GALLIUM-CONTAINING NITRIDE
(FR) PROCEDE DE PRODUCTION DE NITRURE MONOCRISTALLIN MASSIF CONTENANT DU GALLIUM
Abstract: front page image
(EN)The invention relates to new improvements in a process for crystal growth in the environment of supercritical ammonia-containing solution, which are based on use of specific azide mineralizers and result in the improved bulk Group XIII element nitride monocrystals, in particular balk monocrystalline gallium-containing nitride, intended mainly for variety of nitride-based semiconductor products such as various opto-electronic devices. The invention further relates to a mineralizer used for supercritical ammonia-containing solution which comprises at least one compound selected from the group consisting of LiN3, NaN3, KN3, and CsN3.
(FR)Cette invention concerne un procédé perfectionné permettant d'obtenir une croissance de cristaux dans l'environnement d'une solution supercritique contenant de l'ammoniac. Ce procédé perfectionné repose sur l'utilisation de minéralisateurs azides spécifiques et permet de produire de meilleurs monocristaux massifs de nitrures d'éléments du groupe XIII, et plus précisément du nitrure monocristallin massif contenant du gallium, destinés principalement à une multitude de produits semi-conducteurs à base de nitrure, tels que divers dispositifs optoélectroniques. Cette invention concerne également un minéralisateur utilisé pour une solution supercritique à base d'ammoniac comprenant au moins un composé sélectionné dans le groupe contenant LiN3, NaN3, KN3 et CsN3.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, OM, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)