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1. (WO2004003256) ANISOTROPIC DRY ETCHING OF CU-CONTAINING LAYERS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2004/003256    International Application No.:    PCT/US2003/016240
Publication Date: 08.01.2004 International Filing Date: 27.06.2003
Chapter 2 Demand Filed:    28.01.2004    
IPC:
C23F 4/00 (2006.01)
Applicants: TOKYO ELECTRON LIMITED [JP/JP]; TBS Broadcast Center, 3-6, Akasaka 5-chome, Minato-ku, Tokyo 107-8481 (JP) (For All Designated States Except US).
CHEN, Lee [US/US]; (US) (For US Only).
LUDVIKSSON, Audunn [IS/US]; (US) (For US Only)
Inventors: CHEN, Lee; (US).
LUDVIKSSON, Audunn; (US)
Agent: CASEY, Michael, R.; Oblon, Spivak, McClelland, Maier & Neustadt, P.C., 1940 Duke Street, Alexandria, VA 22314 (US)
Priority Data:
60/392,045 28.06.2002 US
Title (EN) ANISOTROPIC DRY ETCHING OF CU-CONTAINING LAYERS
(FR) GRAVURE ANISOTROPIQUE A SEC DE COUCHES CONTENANT DU CU
Abstract: front page image
(EN)A method and apparatus for dry etching pure Cu and Cu-containing layers (220, 310) for manufacturing integrated circuits. The invention uses a directional beam of O-atoms with high kinetic energy (340) to oxidize the Cu and Cu-containing layers, and etching reagents (370) that react with the oxidized Cu (360) to form volatile Cu-containing etch products (390). The invention allows for low-temperature, anisotropic etching of pure Cu and Cu-containing layers in accordance with a patterned hard mask or photoresist (230, 330).
(FR)L'invention concerne un procédé et un appareil de gravure à sec de couches de cuivre pur et de couches contant du cuivre (220, 310) afin de fabriquer des circuits intégrés. L'appareil de l'invention utilise un faisceau directionnel d'atomes d'oxygène d'énergie cinétique élevée (340) afin d'oxyder ces couches, et des réactifs de gravure (370) réagissant avec le cuivre oxydé (360) afin de former des produits de gravure volatils contenant du cuivre (390). L'invention permet de graver des couches de cuivre pur et contenant du cuivre de façon anisotropique à basse température compatible avec un masque dur structuré ou une photorésine (230, 330).
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NI, NO, NZ, OM, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)