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Machine translation
1. (WO2003079453) TRENCH DMOS TRANSISTOR HAVING IMPROVED TRENCH STRUCTURE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2003/079453    International Application No.:    PCT/US2003/007417
Publication Date: 25.09.2003 International Filing Date: 11.03.2003
IPC:
H01L 21/336 (2006.01), H01L 29/06 (2006.01), H01L 29/423 (2006.01), H01L 29/78 (2006.01)
Applicants: GENERAL SEMICONDUCTOR, INC. [US/US]; 10 Melville Park Rd. Melville, NY 11747-3113 (US)
Inventors: SO, Koon, Chong; (US).
HSHIEH, Fwu-Iuan; (US).
TSUI, Yan, Man; (US)
Agent: WILLIAMS, Karin, L.; Mayer, Fortkort & Williams, PC 251 North Avenue West, 2nd Floor Westfield, NJ 07090 (US)
Priority Data:
10/094,932 11.03.2002 US
Title (EN) TRENCH DMOS TRANSISTOR HAVING IMPROVED TRENCH STRUCTURE
(FR) TRANSISTOR DMOS EN TRANCHEE A STRUCTURE DE TRANCHEE AMELIOREE
Abstract: front page image
(EN)A trench DMOS transistor cell is provided that includes a substrate (104) of a first conductivity type and a body region (116) located on the substrate, which has a second conductivity type. At least one trench (124) extends through the body region and the substrate. An insulating layer (150) lines the trench and a conductive electrode (152) is placed in the trench overlying the insulating layer. A source (140) region of the first conductivity type is located in the body region adjacent to the trench. The trench has sidewalls that define a polygon in the plane of the substrate so that adjacent sidewalls contact one another at an angle greater than 90 degrees.
(FR)L'invention porte sur une cellule de transistor DMOS en tranchée comportant un substrat (104) d'un premier type de conductivité et une région de corps (116) d'un deuxième type de conductivité disposée sur le substrat. Une tranchée au moins (124) s'étend à travers la région du corps et le substrat. La tranchée est doublée par une couche isolante (150) et une électrode conductrice est placée dans la tranchée au-dessus de la couche isolante. La région source (140), du premier type de conductivité, est située dans la région du corps jouxtant la tranchée. Les parois latérales de la tranchée forment dans le plan du substrat un polygone dont les côtés adjacents se coupent sous un angle supérieur à 90°.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, OM, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, TJ, TM, TN, TR, TT, TZ, UA, UG, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)