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Machine translation
1. (WO2003079420) EVAPORATION SOURCE FOR DEPOSITION PROCESS AND INSULATION FIXING PLATE, AND HEATING WIRE WINDING PLATE AND METHOD FOR FIXING HEATING WIRE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2003/079420    International Application No.:    PCT/KR2003/000525
Publication Date: 25.09.2003 International Filing Date: 18.03.2003
Chapter 2 Demand Filed:    19.09.2003    
IPC:
C23C 14/24 (2006.01)
Applicants: INNOVEX. INC. [KR/KR]; 505, Factory World, 332-2 Wonchun-dong, Paldal-gu, Suwon, Kyeonggi-do 442-758 (KR) (For All Designated States Except US).
LEE, Jae-Gyoung [KR/KR]; (KR) (For US Only).
KIM, Shin-Cheul [KR/KR]; (KR) (For US Only).
MYOUNG, Noh-Hoon [KR/KR]; (KR) (For US Only)
Inventors: LEE, Jae-Gyoung; (KR).
KIM, Shin-Cheul; (KR).
MYOUNG, Noh-Hoon; (KR)
Agent: LIM, Pyoung-Sup; 303, Newseoul Bldg.,, 828-8 Yeoksam-dong,, Gangnam-gu,, Seoul 135-935 (KR)
Priority Data:
10-2002-0014703 19.03.2002 KR
10-2002-0014704 19.03.2002 KR
Title (EN) EVAPORATION SOURCE FOR DEPOSITION PROCESS AND INSULATION FIXING PLATE, AND HEATING WIRE WINDING PLATE AND METHOD FOR FIXING HEATING WIRE
(FR) SOURCE D'EVAPORATION POUR PROCEDE DE DEPOT ET PLAQUE ISOLANTE DE FIXATION, ET PLAQUE D'ENROULEMENT DE FIL CHAUFFANT ET PROCEDE DE FIXATION DE FIL CHAUFFANT
Abstract: front page image
(EN)Disclosed is a linear evaporation source used for forming a thin film for an organic semiconductor device, the linear evaporation source comprising a crucible having a receiving space formed therein, for accommodating an evaporation material and an opening section formed at one side of the crucible in a length direction, wherein the opening section becomes narrow as it travels from both ends to a center portion thereof. If the thin film is formed using the linear evaporation source, a low material use rate of the vacuum evaporation source for the formation of the thin film is improved, thickness uniformity of the deposited thin film throughout the whole area is secured, and shadow effect due to the shadow mask is improved.
(FR)L'invention concerne une source d'évaporation linéaire utilisée pour former un film mince destiné à un dispositif à semi-conducteur organique, ladite source comprenant un creuset doté d'un compartiment de réception pour loger un matériau d'évaporation et une section d'ouverture formée sur un côté du creuset dans le sens de la longueur. La section d'ouverture se rétrécit à mesure qu'elle se déplace des deux extrémités vers son centre. Si le film mince est formé au moyen de la source d'évaporation linéaire, on améliore le faible taux d'utilisation de matériau de la source d'évaporation sous vide pour la formation dudit film mince, l'uniformité d'épaisseur du film mince déposé sur toute la surface étant ainsi assurée et l'effet d'ombre dû au masque perforé amélioré.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NI, NO, NZ, OM, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)