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Machine translation
1. (WO2003077257) MULTI-STAGE PER CELL MAGNETORESISTIVE RANDOM ACCESS MEMORY
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2003/077257    International Application No.:    PCT/SG2003/000045
Publication Date: 18.09.2003 International Filing Date: 07.03.2003
Chapter 2 Demand Filed:    10.10.2003    
IPC:
G11C 11/56 (2006.01)
Applicants: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH [SG/SG]; 10 Science Park Road, #01/01-03 The Alpha, Singapore Science Park II, 117684 Singapore (SG) (For All Designated States Except US).
ZHENG, YuanKai [CN/SG]; (SG) (For US Only).
WU, Yihong [SG/SG]; (SG) (For US Only).
GUO, Zai,Bing [CN/SG]; (SG) (For US Only).
QIU, Jin,Jun [CN/SG]; (SG) (For US Only).
LI, Ke,Bin [CN/SG]; (SG) (For US Only).
HAN, Gu,Chang [CN/SG]; (SG) (For US Only)
Inventors: ZHENG, YuanKai; (SG).
WU, Yihong; (SG).
GUO, Zai,Bing; (SG).
QIU, Jin,Jun; (SG).
LI, Ke,Bin; (SG).
HAN, Gu,Chang; (SG)
Agent: THAM, Winnie; c/o Allen & Gledhill, 36 Robinson Road, #18-01 City House, 068877 Singapore (SG)
Priority Data:
200201415-7 12.03.2002 SG
Title (EN) MULTI-STAGE PER CELL MAGNETORESISTIVE RANDOM ACCESS MEMORY
(FR) MEMOIRE VIVE MAGNETORESISTIVE A ETAGES MULTIPLES PAR CELLULE
Abstract: front page image
(EN)A multi-state magnetoresistive random access memory unit (MRAM) having a plurality of memory cells, each of the cells are written to and read from, independently of other cells. The plurality of memory cells comprises a recording layer as a pinned magnetic layer and a read layer as an unpinned layer. The unpinned layer has a higher Curie point than the pinned layer. The pinned layer in an individual cell is heated to near its Curie point and a bit line current and a word line current is used to align the magnetization vector of the recording layer at a plurality of angles relative to the magnetization vector of the read layer.
(FR)L'invention concerne une unité de mémoire vive magnétorésistive (MRAM) à étapes multiples qui comprend une pluralité de cellules de mémoire, les opérations d'écriture et de lecture sur/depuis chaque cellule se faisant de manière indépendante des autres cellules. La pluralité de cellules de mémoire comprend une couche d'enregistrement comme couche magnétique fixe et une couche de lecture comme couche libre. La couche libre présente un point Curie plus élevé que celui de la couche fixe. La température de la couche fixe contenue dans une cellule individuelle est quasiment portée à son point Curie, un courant de ligne de bits et un courant de ligne de caractères étant utilisés pour aligner le vecteur de magnétisation de la couche d'enregistrement dans une pluralité d'angles relatifs au vecteur de magnétisation de la couche de lecture.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NI, NO, NZ, OM, PH, PL, PT, RO, RU, SC, SD, SE, SK, SL, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PT, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)