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1. (WO2003075360) MAGNETORESISTIVE SWITCH EFFECT ELEMENT AND MAGNETOSENSITIVE DEVICE COMPRISING IT
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2003/075360    International Application No.:    PCT/JP2003/002347
Publication Date: 12.09.2003 International Filing Date: 28.02.2003
IPC:
G01R 33/09 (2006.01), H01L 29/82 (2006.01)
Applicants: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY [JP/JP]; 3-1, Kasumigaseki 1chome Chiyoda-ku, Tokyo 100-8921 (JP) (For All Designated States Except US).
CENTER FOR ADVANCED SCIENCE AND TECHNOLOGY INCUBATION, LTD. [JP/JP]; Shin-Marunouchi Building 6F 5-1, Marunouchi 1-chome Chiyoda-ku, Tokyo 100-0005 (JP) (For All Designated States Except US).
AKINAGA, Hiroyuki [JP/JP]; (JP) (For US Only).
MIURA, Noboru [JP/JP]; (JP) (For US Only).
UCHIDA, Kazuhito [JP/JP]; (JP) (For US Only)
Inventors: AKINAGA, Hiroyuki; (JP).
MIURA, Noboru; (JP).
UCHIDA, Kazuhito; (JP)
Agent: SHIMIZU, Hatsushi; Kantetsu Tsukuba Bldg. 6F 1-1-1, Oroshi-machi Tsuchiura-shi, Ibaraki 300-0847 (JP)
Priority Data:
2002/55364 01.03.2002 JP
Title (EN) MAGNETORESISTIVE SWITCH EFFECT ELEMENT AND MAGNETOSENSITIVE DEVICE COMPRISING IT
(FR) ELEMENT A EFFET DE COMMUTATION MAGNETORESISTANT ET DISPOSITIF MAGNETORESISTANT COMPRENANT CET ELEMENT
Abstract: front page image
(EN)A magnetoresistive switch effect element composed of a material easy-to-match with a semiconductor production process and can be produced by a simple production process to exhibit a significant magnetoresistive switch effect at room temperature. On a semiconductor region, a plurality of conductive regions are provided while being spaced apart from each other and two electrode parts are provided while being spaced apart by l00 μm or less, wherein the conductive regions are interconnected electrically through a junction consisting of at least one adjacent conductive region and a semiconductor region between both conductive regions connected electrically through the conductive region and the junction.
(FR)L'invention porte sur un élément à effet de commutation magnétorésistant composé d'un matériau facile à adapter à un procédé de fabrication de semi-conducteurs et pouvant être fabriqué au moyen d'un simple procédé de fabrication afin de posséder un effet de commutation magnétorésistant notable à température ambiante. Plusieurs zones conductrices sont disposées sur une zone semi-conductrice, tout en étant espacées l'une de l'autre, ainsi que deux éléments d'électrode qui sont espacés de 100 $g(m)m maximum, les zones conductrices étant interconnectées au moyen d'une jonction faite d'au moins une zone conductrice adjacente et d'une zone semi-conductrice entre les deux zones conductrices électriquement reliées à travers la zone conductrice et la jonction.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, KE, KG, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, OM, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PT, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)