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1. (WO2003075278) MRAM DATA MEMORY COMPRISING AN INTERMEDIATE LAYER MADE OF A SEMICONDUCTIVE MATERIAL

Pub. No.:    WO/2003/075278    International Application No.:    PCT/EP2003/002205
Publication Date: Sat Sep 13 01:59:59 CEST 2003 International Filing Date: Wed Mar 05 00:59:59 CET 2003
IPC: G11C 11/15
G11C 11/16
Applicants: FORSCHUNGSZENTRUM JÜLICH GMBH
GRÜNBERG, Peter
BÜRGLER, Daniel
GAREEV, Rashid
SCHREIBER, Reiner
Inventors: GRÜNBERG, Peter
BÜRGLER, Daniel
GAREEV, Rashid
SCHREIBER, Reiner
Title: MRAM DATA MEMORY COMPRISING AN INTERMEDIATE LAYER MADE OF A SEMICONDUCTIVE MATERIAL
Abstract:
The invention relates to an MRAM data memory comprising a multitude of memory locations (10). Each memory location comprises a first ferromagnetic layer (12), which is applied to a substrate (11) and which has a fixed magnetic orientation (pinned layer), a second ferromagnetic layer (14), which has a slightly rotatable magnetic orientation (free layer), and an intermediate layer (13), which is placed between the ferromagnetic layers (12, 14). The MRAM data memory is characterized in that the intermediate layer (13) is made of a semiconductive material. The invention also relates to a method for storing data in an MRAM data memory of the aforementioned type.