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1. (WO2003074227) POLISHING PAD FOR USE IN CHEMICAL-MECHANICAL PLANARIZATION OF SEMICONDUCTOR WAFERS AND METHOD OF MAKING SAME

Pub. No.:    WO/2003/074227    International Application No.:    PCT/US2003/005844
Publication Date: Sep 12, 2003 International Filing Date: Feb 24, 2003
IPC: B24B 37/24
B24D 11/00
B24D 3/32
Applicants: RAYTECH INNOVATIVE SOLUTIONS, INC.
PETROSKI, Angela
COOPER, Richard, D.
FATHAUER, Paul
PETROSKI, James, P.
YASNIC, Marc, A.
Inventors: PETROSKI, Angela
COOPER, Richard, D.
FATHAUER, Paul
PETROSKI, James, P.
YASNIC, Marc, A.
Title: POLISHING PAD FOR USE IN CHEMICAL-MECHANICAL PLANARIZATION OF SEMICONDUCTOR WAFERS AND METHOD OF MAKING SAME
Abstract:
A polishing pad for use in chemical mechanical polishing of substrates that being made of a porous structure comprising a matrix consisting of fibers, such as cotton linter cellulose bound with a thermoset resin, such as phenolic resin. The polishing pad surface has voids in which polishing slurry flows during chemical mechanical polishing of substrates, and in which debris formed during the chemical-mechanical polishing of substrates is temporarily stored for subsequent rinsing away. The polishing surface of the pad is ground to form asperities that aid in slurry transport and polishing, as well as opening the porous structure of the pad. The porous pad contains nanometer-sized filler-particles that reinforce the structure, imparting an increased resistance to wear as compared to prior-art pads. Also disclosed is a method of making the polishing pad.