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Machine translation
1. (WO2003063206) METHOD FOR DOPING GALLIUM NITRIDE (GaN) SUBSTRATES AND THE RESULTING DOPED GaN SUBSTRATE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2003/063206    International Application No.:    PCT/US2003/001538
Publication Date: 31.07.2003 International Filing Date: 16.01.2003
IPC:
H01L 21/261 (2006.01), H01L 21/324 (2006.01), H01L 33/02 (2010.01), H01L 33/32 (2010.01)
Applicants: GAN SEMICONDUCTOR, INC. [US/US]; 1275 Reamwood Drive, Sunnyvale,CA 94086 (US)
Inventors: CHO, Hak, Dong; (US).
KANG, Sang, Kyu; (US)
Agent: KURZ, Walter; Heller Ehrman White & McAuliffe LLP, 275 Middlefield Road, Menlo Park, CA 94025-3506 (US)
Priority Data:
10/052,480 17.01.2002 US
Title (EN) METHOD FOR DOPING GALLIUM NITRIDE (GaN) SUBSTRATES AND THE RESULTING DOPED GaN SUBSTRATE
(FR) PROCEDE DE DOPAGE DE SUBSTRATS AU NITRURE DE GALLIUM (GAN) ET SUBSTRATS GAN DOPES AINSI OBTENUS
Abstract: front page image
(EN)A method for doping Gallium Nitride (GaN) substrates is provided wherein Gallium (Ga) is transmuted to Germanium (Ge) by applying thermal neutron irradiation to a GaN substrate material or wafer. The Ge is introduced as an impurity in GaN and acts as a donor. The concentration of Ge introduced is controlled by the thermal neutron flux. When the thermal neutron irradiation is applied to a GaN wafer the fast neutrons are transmuted together with the former and cause defects such as the collapse of the crystallization. The GaN wafer is thermally treated or processed at a fixed temperature to eliminate such defects.
(FR)La présente invention concerne un procédé de dopage de substrats au nitrure de gallium (GaN) par lequel le gallium (Ga) est transmuté en germanium (Ge) par irradiation d'un matériau de substrat ou d'une plaquette en GaN par un flux de neutrons thermiques. Le Ge, qui est introduit dans le GaN sous forme d'une impureté, agit comme un donneur. La concentration du Ge introduit est régulée par le flux de neutrons thermiques. Pendant l'irradiation de la plaquette au GaN par les neutrons thermiques, les neutrons rapides se transmutent ensemble avec le précédent et provoquent des défauts tels que l'effondrement de la cristallisation. La plaquette de GaN subit un traitement thermique ou un traitement à température fixe pour éliminer de tels défauts.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, OM, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, TJ, TM, TN, TR, TT, TZ, UA, UG, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IT, LU, MC, NL, PT, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)