WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2003062487) TARGET OF HIGH−PURITY NICKEL OR NICKEL ALLOY AND ITS PRODUCING METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2003/062487    International Application No.:    PCT/JP2002/012438
Publication Date: 31.07.2003 International Filing Date: 28.11.2002
Chapter 2 Demand Filed:    02.04.2003    
IPC:
C23C 14/34 (2006.01), G11B 5/851 (2006.01)
Applicants: NIKKO MATERIALS COMPANY, LIMITED [JP/JP]; 10-1, Toranomon 2-chome, Minato-ku, Tokyo 105-8407 (JP) (For All Designated States Except US).
YAMAKOSHI, Yasuhiro [JP/JP]; (JP) (For US Only).
MIYASHITA, Hirohito [JP/JP]; (JP) (For US Only)
Inventors: YAMAKOSHI, Yasuhiro; (JP).
MIYASHITA, Hirohito; (JP)
Agent: OGOSHI, Isamu; Ogoshi International Patent Office, Toranomon 9 Mori Bldg. 3F, 2-2, Atago 1-chome, Minato-ku, Tokyo 105-0002 (JP)
Priority Data:
2002-9981 18.01.2002 JP
Title (EN) TARGET OF HIGH−PURITY NICKEL OR NICKEL ALLOY AND ITS PRODUCING METHOD
(FR) CIBLE EN NICKEL OU ALLIAGE DE NICKEL HAUTE PURETE ET SON PROCEDE DE PRODUCTION
Abstract: front page image
(EN)A target of high−purity nickel or a nickel alloy for magnetron sputtering by which a sputter film excellent in uniformity is formed. The target is characterized by exhibiting a permeability of 100 or more. Use of such a target improves the uniformity of the film (uniformity of thickness of the film) and the ignitability of the plasma even in the manufacturing process using a 300−mm wafer. A method for producing such a target is also disclosed.
(FR)L'invention concerne une cible en nickel ou alliage de nickel haute pureté, pour pulvérisation magnétron, dans laquelle un film de pulvérisation d'excellente uniformité est formé. La cible est caractérisée en ce qu'elle présente une perméabilité égale ou supérieure à 100. L'utilisation d'une telle cible améliore l'uniformité du film (uniformité de l'épaisseur du film) et l'inflammabilité du plasma, même dans le procédé de fabrication utilisant une plaquette de 300 mm. L'invention concerne en outre un procédé de production d'une telle cible.
Designated States: CN, KR, US.
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, SK, TR).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)