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Machine translation
1. (WO2003061119) SURFACE ACOUSTIC WAVE ELEMENT AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2003/061119    International Application No.:    PCT/JP2003/000362
Publication Date: 24.07.2003 International Filing Date: 17.01.2003
Chapter 2 Demand Filed:    06.05.2003    
IPC:
H03H 3/08 (2006.01)
Applicants: NEC CORPORATION [JP/JP]; 7-1, Shiba 5-chome, Minato-ku, Tokyo 108-8001 (JP) (For All Designated States Except US).
HATTORI, Wataru [JP/JP]; (JP) (For US Only)
Inventors: HATTORI, Wataru; (JP)
Agent: IKEDA, Noriyasu; The 3rd Mori Building, 4-10, Nishishinbashi 1-chome, Minato-ku, Tokyo 105-0003 (JP)
Priority Data:
2002-8501 17.01.2002 JP
Title (EN) SURFACE ACOUSTIC WAVE ELEMENT AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
(FR) ELEMENT D'ONDE ACOUSTIQUE DE SURFACE ET PROCEDE DE FABRICATION D'UN DISPOSITIF A SEMI-CONDUCTEUR
Abstract: front page image
(EN)A template (3) manufactured to have high−accuracy protrusions and recesses in advance by a lithography technology employing an electron beam is pressed against a resist film (2) applied onto a substrate (1) thus transferring a resist pattern (5). A thin metal film (6) for electrode is then formed on the resist pattern (5) formed by transfer and then it is stripped off by a lift−off method along with the resist film (2).
(FR)L'invention concerne un gabarit (3) présentant des protubérances et des évidements très précis que l'on obtient par la technologie de lithographie utilisant un faisceau électronique. Ledit gabarit est plaqué contre un film de protection (2) appliqué sur un substrat (1) transférant ainsi un motif de protection (5). Un film métallique mince (6) pour électrode est ensuite formé sur le motif de protection (5) obtenu par transfert, puis décapé par un procédé de retrait et grâce au film de protection (2).
Designated States: CN, US.
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)