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Machine translation
1. (WO2003056612) METHOD OF FORMING COPPER INTERCONNECTIONS FOR SEMICONDUCTOR INTEGRATED CIRCUITS ON A SUBSTRATE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2003/056612    International Application No.:    PCT/KR2002/002468
Publication Date: 10.07.2003 International Filing Date: 28.12.2002
IPC:
H01L 21/285 (2006.01), H01L 21/768 (2006.01), H01L 23/532 (2006.01)
Applicants: GENITECH CO., LTD. [KR/KR]; 1694-5 Shinil-dong, Daeduk-gu Daejeon 306-230 (KR) (For All Designated States Except US).
PARK, Hyung-Sang [KR/KR]; (KR) (For US Only).
KANG, Sang-Won [KR/KR]; (KR) (For US Only)
Inventors: PARK, Hyung-Sang; (KR).
KANG, Sang-Won; (KR)
Agent: LEE, Young-Pil; The Cheonghwa Bldg., 1571-18 Seocho-dong, Seocho-gu Seoul 137-874 (KR)
Priority Data:
10-2001-0086955 28.12.2001 KR
Title (EN) METHOD OF FORMING COPPER INTERCONNECTIONS FOR SEMICONDUCTOR INTEGRATED CIRCUITS ON A SUBSTRATE
(FR) PROCEDE DE FORMATION SUR UN SUBSTRAT D'INTERCONNEXIONS EN CUIVRE POUR CIRCUITS INTEGRES A SEMI-CONDUCTEURS
Abstract: front page image
(EN)A method for forming copper interconnection conductors for interconnecting integrated circuits on a substrate by forming a barrier layer or an adhesion layer or both having excellent adhesion property is disclosed. Ruthenium (Ru) and ruthenium alloys, and rhenium (Re) and rhenium alloys are proposed to use according to the present invention. Other metals proposed to use include nickel (Ni), platinum (Pt), osmium (Os), iridium (Ir) and their alloys, respectively.
(FR)L'invention concerne un procédé de formation de conducteurs d'interconnexions en cuivre destinés à raccorder des circuits intégrés sur un substrat par formation d'une couche barrière ou d'une couche d'adhésion ou des deux possédant une excellente propriété d'adhésion. L'invention concerne l'utilisation du ruthénium (Ru) et des alliages de ruthénium, ainsi que du rhénium (Re) et des alliages de rhénium. D'autres métaux peuvent également être utilisés, notamment le nickel (Ni), le platine (Pt), l'osmium (Os), l'iridium (Ir) et leurs alliages correspondants.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, OM, PH, PL, PT, RO, RU, SC, SD, SE, SG, SK, SL, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: Korean (KO)