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1. (WO2003056611) RESISTLESS LITHOGRAPHY METHOD FOR PRODUCING FINE STRUCTURES

Pub. No.:    WO/2003/056611    International Application No.:    PCT/DE2002/004524
Publication Date: Jul 10, 2003 International Filing Date: Dec 10, 2002
IPC: B81C 1/00
G03F 7/20
H01L 21/033
H01L 21/265
H01L 21/308
H01L 21/3213
Applicants: INFINEON TECHNOLOGIES AG
TEWS, Helmut
FEHLHABER, Rodger
Inventors: TEWS, Helmut
FEHLHABER, Rodger
Title: RESISTLESS LITHOGRAPHY METHOD FOR PRODUCING FINE STRUCTURES
Abstract:
The invention relates to a resistless lithography method for producing fine structures. According to said method, a semiconductor mask layer (HM) is formed on a carrier material (TM, HM'), and a selective ion implantation (I) is carried out in order to dope selected regions (1) of the semiconductor mask layer (HM). A semiconductor mask which can be used for further structuring is obtained by removing the non-doped regions of the semiconductor mask layer (HM) by means of a wet-chemical process. The invention thus provides a simple and highly precise resistless lithography method for producing structures smaller than 100 nm.