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1. (WO2003054976) BORON PHOSPHIDE-BASED SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF

Pub. No.:    WO/2003/054976    International Application No.:    PCT/JP2002/013009
Publication Date: Jul 3, 2003 International Filing Date: Dec 12, 2002
IPC: H01L 21/205
H01L 29/201
H01L 29/207
H01L 33/30
Applicants: SHOWA DENKO K.K.
UDAGAWA, Takashi
Inventors: UDAGAWA, Takashi
Title: BORON PHOSPHIDE-BASED SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF
Abstract:
A boron phosphide-based semiconductor device includes a single crystal substrate having formed thereon a boron-phosphide (BP)-based semiconductor layer containing boron and phosphorus as constituent elements, where phosphorus (P) occupying the vacant lattice point (vacancy) of boron (B) and boron occupying the vacant lattice point (vacancy) of phosphorus are present in the boron-phosphide (BP)-based semiconductor layer. The boron phosphide-based semiconductor device includes a p-type boron phosphide-based semiconductor layer in which boron occupying the vacancy of phosphorus is contained in a higher atomic concentration than phosphorus occupying the vacancy of boron and a p-type impurity of Group II element or Group IV element is added.