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1. WO2003036734 - MAGNETORESISTANCE EFFECT ELEMENT, MAGETIC MEMORY ELEMENT, MAGNETIC MEMORY DEVICE, AND THEIR MANUFACTURING METHOD

Publication Number WO/2003/036734
Publication Date 01.05.2003
International Application No. PCT/JP2002/010609
International Filing Date 11.10.2002
Chapter 2 Demand Filed 19.03.2003
IPC
G01R 33/09 2006.1
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
02Measuring direction or magnitude of magnetic fields or magnetic flux
06using galvano-magnetic devices
09Magneto-resistive devices
G11C 11/15 2006.1
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
14using thin-film elements
15using multiple magnetic layers
G11C 11/16 2006.1
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
H01F 10/32 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10Thin magnetic films, e.g. of one-domain structure
32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
H01F 41/18 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
41Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
14for applying magnetic films to substrates
18by cathode sputtering
H01F 41/30 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
41Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
14for applying magnetic films to substrates
30for applying nanostructures, e.g. by molecular beam epitaxy (MBE)
CPC
B82Y 10/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
10Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
B82Y 25/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
25Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
B82Y 40/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
40Manufacture or treatment of nanostructures
G01R 33/093
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
02Measuring direction or magnitude of magnetic fields or magnetic flux
06using galvano-magnetic devices, e.g. Hall effect devices; using magneto-resistive devices
09Magnetoresistive devices
093using multilayer structures, e.g. giant magnetoresistance sensors
G11B 5/3903
GPHYSICS
11INFORMATION STORAGE
BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
5Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
127Structure or manufacture of heads, e.g. inductive
33Structure or manufacture of flux-sensitive heads, ; i.e. for reproduction only; Combination of such heads with means for recording or erasing only
39using magneto-resistive devices ; or effects
3903using magnetic thin film layers or their effects, the films being part of integrated structures
G11B 5/3909
GPHYSICS
11INFORMATION STORAGE
BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
5Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
127Structure or manufacture of heads, e.g. inductive
33Structure or manufacture of flux-sensitive heads, ; i.e. for reproduction only; Combination of such heads with means for recording or erasing only
39using magneto-resistive devices ; or effects
3903using magnetic thin film layers or their effects, the films being part of integrated structures
3906Details related to the use of magnetic thin film layers or to their effects
3909Arrangements using a magnetic tunnel junction
Applicants
  • SONY CORPORATION [JP]/[JP] (AllExceptUS)
  • OHBA, Kazuhiro [JP]/[JP] (UsOnly)
  • HAYASHI, Kazuhiko [JP]/[JP] (UsOnly)
  • KANO, Hiroshi [JP]/[JP] (UsOnly)
  • BESSHO, Kazuhiro [JP]/[JP] (UsOnly)
  • MIZUGUCHI, Tetsuya [JP]/[JP] (UsOnly)
  • HIGO, Yutaka [JP]/[JP] (UsOnly)
  • HOSOMI, Masanori [JP]/[JP] (UsOnly)
  • YAMAMOTO, Tetsuya [JP]/[JP] (UsOnly)
  • NARISAWA, Hiroaki [JP]/[JP] (UsOnly)
  • SONE, TAkeyuki [JP]/[JP] (UsOnly)
  • ENDO, Keitaro [JP]/[JP] (UsOnly)
  • KUBO, Shinya [JP]/[JP] (UsOnly)
Inventors
  • OHBA, Kazuhiro
  • HAYASHI, Kazuhiko
  • KANO, Hiroshi
  • BESSHO, Kazuhiro
  • MIZUGUCHI, Tetsuya
  • HIGO, Yutaka
  • HOSOMI, Masanori
  • YAMAMOTO, Tetsuya
  • NARISAWA, Hiroaki
  • SONE, TAkeyuki
  • ENDO, Keitaro
  • KUBO, Shinya
Agents
  • TSUNODA, Yoshisue
Priority Data
2001-31585712.10.2001JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) MAGNETORESISTANCE EFFECT ELEMENT, MAGETIC MEMORY ELEMENT, MAGNETIC MEMORY DEVICE, AND THEIR MANUFACTURING METHOD
(FR) ELEMENT A EFFET DE MAGNETORESISTANCE, ELEMENT DE MEMOIRE MAGNETIQUE, DISPOSITIF DE MEMOIRE MAGNETIQUE ET PROCEDE DE FABRICATION CORRESPONDANT
Abstract
(EN) A magnetoresistance effect element comprising a ferromagnetic tunnel coupling with a tunnel barrier layer sandwiched by at least a pair of ferromagnetic layers wherein a magnetization free layer constituted of one of the ferromagnetic layers is made of a single layer of a material having an amorphous or crystallite structure, or a material layer the main part of which has an amorphous or crystallite structure. This magnetoresistance effect element provides excellent magnetic−resistance characteristics. A magnetic memory element and a magnetic memory device comprising it as the memory element improve both characteristics of write and read.
(FR) L'invention concerne un élément à effet de magnétorésistance comprenant un tunnel ferromagnétique couplé à une couche barrière tunnel prise en sandwich entre au moins une paire de couches ferromagnétiques dans lesquelles une couche exempte de magnétisation constituée d'une des couches ferromagnétiques est fabriquée à partir d'une monocouche d'un matériau possédant une structure amorphe ou cristallite, ou une couche de matériau dont la partie principale possède une structure amorphe ou cristallite. L'élément à effet de magnétorésistance possède d'excellentes caractéristiques de résistance magnétique. Un élément de mémoire magnétique et un dispositif de mémoire magnétique comprenant cet élément à effet de magnétorésistance en tant qu'élément de mémoire améliore à la fois les caractéristiques d'écriture et de lecture.
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