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1. (WO2003009379) SEMICONDUCTIVE DEVICE AND METHOD OF FORMATION
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2003/009379    International Application No.:    PCT/US2002/018476
Publication Date: 30.01.2003 International Filing Date: 11.06.2002
Chapter 2 Demand Filed:    29.01.2003    
IPC:
H01L 21/60 (2006.01)
Applicants: MOTOROLA, INC., A CORPORATION OF THE STATE OF DELAWARE [US/US]; 1303 East Algonquin Road, Schaumburg, IL 60196 (US)
Inventors: GREER, Stuart, E.; (US)
Agent: KOCH, William, E.; Motorola, Inc., Corp. Law Dpt., Intell. Property Section, 7700 West Parmer Lane, MD: TX32/PL02, Austin, TX 78729 (US)
Priority Data:
09/905,756 14.07.2001 US
Title (EN) SEMICONDUCTIVE DEVICE AND METHOD OF FORMATION
(FR) DISPOSITIF A SEMI-CONDUCTEURS ET PROCEDE DE FABRICATION
Abstract: front page image
(EN)In accordance with one embodiment of the present invention, a semiconductor device underbump metallurgy (414) is formed over a semiconductor bond pad (128), wherein the underbump metallurgy (414) comprises a chromium, copper, and nickel phased-region (404), and wherein the presence of nickel in the phased-region (404) inhibits conversion of tin from the solder bump and other tin sources from forming spallable Cu6Sn5 copper-tin intermetallics.
(FR)La présente invention concerne, dans un mode de réalisation, une structure métallurgique (414) sous-jacente aux bosses d'un dispositif à semi-conducteurs, formée sur un plot de connexion (128) à semi-conducteurs. Ladite structure métallurgique (414) sous-jacente aux bosses comprend une région (404) en phase de chrome, cuivre et nickel, la présence de nickel dans la région en phase (404) empêchant que l'étain des bosses de soudure et d'autres sources d'étain ne forme des structures intermétalliques de cuivre-étain Cu6Sn5 pouvant s'écailler.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, OM, PH, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TN, TR, TT, TZ, UA, UG, UZ, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)