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1. (WO2003007366) METHOD OF FORMING VIA METAL LAYER AND VIA METAL LAYER− FORMED SUBSTRATE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2003/007366    International Application No.:    PCT/JP2002/006436
Publication Date: 23.01.2003 International Filing Date: 26.06.2002
IPC:
H01L 21/768 (2006.01)
Applicants: TOKYO ELECTRON LIMITED [JP/JP]; 3-6, Akasaka 5-Chome Minato-Ku, Tokyo 107-8481 (JP) (For All Designated States Except US).
YUASA, Mitsuhiro [JP/JP]; (JP) (For US Only)
Inventors: YUASA, Mitsuhiro; (JP)
Agent: ITOH, Tadahiko; 32nd Floor, Yebisu Garden Place Tower 20-3, Ebisu 4-chome Shibuya-ku, Tokyo 150-6032 (JP)
Priority Data:
2001-207869 09.07.2001 JP
Title (EN) METHOD OF FORMING VIA METAL LAYER AND VIA METAL LAYER− FORMED SUBSTRATE
(FR) TECHNIQUE DE REALISATION D'UNE COUCHE METALLIQUE A TROUS D'NTERCONNEXION ET SUBSTRAT AINSI OBTENU
Abstract: front page image
(EN)A method of forming a via metal layer characterized by comprising the via forming step of forming a plurality of vias reaching an SiO2 film in an Si film by etching an SOI substrate having sequentially the SiO2 film and the Si film on an Si substrate, and the via metal layer forming step of forming a plurality of via metal layers in the plurality of vias.
(FR)Cette invention concerne un procédé de réalisation d'une couche métallique à trous d'interconnexion, caractérisé en ce qu'il consiste à exécuter une série de trous traversants atteignant une couche de SiO2 dans un film de Si par attaque d'un substrat de SOI comportant dans l'ordre un film de SiO2 et le film Si sur un substrat Si, et à former une pluralité de couches métalliques à trous d'interconnexion dans les trous d'interconnexion.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, OM, PH, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)