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1. (WO2003005508) SEMICONDUCTOR LASER MODULE, OPTICAL AMPLIFIER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LASER MODULE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2003/005508 International Application No.: PCT/JP2002/006680
Publication Date: 16.01.2003 International Filing Date: 02.07.2002
Chapter 2 Demand Filed: 27.12.2002
IPC:
G02B 6/34 (2006.01) ,G02B 6/42 (2006.01) ,H01S 3/094 (2006.01) ,H01S 3/0941 (2006.01) ,H01S 3/30 (2006.01) ,H01S 5/022 (2006.01) ,H01S 5/024 (2006.01) ,H01S 5/10 (2006.01) ,H01S 5/125 (2006.01) ,H01S 5/34 (2006.01) ,H01S 5/40 (2006.01)
G PHYSICS
02
OPTICS
B
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6
Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
24
Coupling light guides
26
Optical coupling means
34
utilising prism or grating
G PHYSICS
02
OPTICS
B
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6
Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
24
Coupling light guides
42
Coupling light guides with opto-electronic elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
3
Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
09
Processes or apparatus for excitation, e.g. pumping
091
using optical pumping
094
by coherent light
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
3
Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
09
Processes or apparatus for excitation, e.g. pumping
091
using optical pumping
094
by coherent light
0941
of a semiconductor laser, e.g. of a laser diode
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
3
Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
30
using scattering effects, e.g. stimulated Brillouin or Raman effects
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
02
Structural details or components not essential to laser action
022
Mountings; Housings
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
02
Structural details or components not essential to laser action
024
Cooling arrangements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
10
Construction or shape of the optical resonator
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
10
Construction or shape of the optical resonator
12
the resonator having a periodic structure, e.g. in distributed feed-back lasers (DFB-lasers)
125
Distributed Bragg reflector lasers (DBR-lasers)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
30
Structure or shape of the active region; Materials used for the active region
34
comprising quantum well or superlattice structures, e.g. single quantum well lasers (SQW-lasers), multiple quantum well lasers (MQW-lasers), graded index separate confinement heterostructure lasers (GRINSCH-lasers)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
40
Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02-H01S5/30128
Applicants: KIMURA, Toshio[JP/JP]; JP (UsOnly)
NAKAE, Masashi[JP/JP]; JP (UsOnly)
TSUKIJI, Naoki[JP/JP]; JP (UsOnly)
YOSHIDA, Junji[JP/JP]; JP (UsOnly)
OHKI, Yutaka[JP/JP]; JP (UsOnly)
AIKIYO, Takeshi[JP/JP]; JP (UsOnly)
FURUKAWA ELECTRIC CO., LTD[JP/JP]; 2-6-1, MARUNOUCHI CHIYODA-KU, Tokyo 100-8322, JP (AllExceptUS)
Inventors: KIMURA, Toshio; JP
NAKAE, Masashi; JP
TSUKIJI, Naoki; JP
YOSHIDA, Junji; JP
OHKI, Yutaka; JP
AIKIYO, Takeshi; JP
Agent: NAKAZAWA, Akihiko; 925, SILK BUILDING 1, YAMASHITA-CHO, NAKA-KU YOKOHAMA-SHI, Kanagawa 231-0023, JP
Priority Data:
2001-20151302.07.2001JP
2001-21726517.07.2001JP
2001-32570523.10.2001JP
2002-11451017.04.2002JP
2002-3325208.02.2002JP
Title (EN) SEMICONDUCTOR LASER MODULE, OPTICAL AMPLIFIER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LASER MODULE
(FR) MODULE LASER A SEMI-CONDUCTEURS, AMPLIFICATEUR OPTIQUE ET PROCEDE DE FABRICATION D'UN MODULE LASER A SEMI-CONDUCTEURS
Abstract:
(EN) A semiconductor laser module which makes an optical fiber (8) couple two laser beams emitted from a semiconductor device (2) by orthogonal polarization combination. The optical fiber (8) is a polarization reserve fiber and so positioned that two orthogonal main axes of the polarization reserve fiber and the two beams may make angles of about 45∘in their respective polarization directions.
(FR) L'invention concerne un module laser à semi-conducteurs grâce auquel une fibre optique (8) couple deux faisceaux laser émis par un dispositif (2) à semi-conducteurs par combinaison de polarisation orthogonale. La fibre optique (8) est une fibre à réserve de polarisation et est positionnée de manière que deux axes orthogonaux principaux de la fibre à réserve de polarisation et les deux faisceaux puissent former des angles d'environ 45° dans leurs directions de polarisation respectives.
front page image
Designated States: CN, JP, US
European Patent Office (EPO) (DE, FR, GB, IT)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)