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1. (WO2003005435) SUBSTRATE TREATING DEVICE AND SUBSTRATE TREATING METHOD, SUBSTRATE FLATTENING METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2003/005435    International Application No.:    PCT/JP2002/006737
Publication Date: 16.01.2003 International Filing Date: 03.07.2002
IPC:
H01L 21/00 (2006.01), H01L 21/30 (2006.01), H01L 21/324 (2006.01), H01L 21/336 (2006.01), H01L 21/84 (2006.01), H01L 29/786 (2006.01)
Applicants: OHMI, Tadahiro [JP/JP]; (JP).
TOKYO ELECTRON LIMITED [JP/JP]; 3-6, Akasaka 5-Chome, Minato-Ku, Tokyo 107-8481 (JP) (AE, AG, AL, AM, AT, AU, AZ, BA, BB, BE, BF, BG, BJ, BR, BY, BZ, CA, CF, CG, CH, CI, CM, CN, CO, CR, CU, CY, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, FR, GA, GB, GD, GE, GH, GM, GN, GQ, GR, GW, HR, HU, ID, IE, IL, IN, IS, IT, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MC, MD, MG, MK, ML, MN, MR, MW, MX, MZ, NE, NL, NO, NZ, OM, PH, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, SN, SZ, TD, TG, TJ, TM, TN, TR, TT, TZ, UA, UG, UZ, VN, YU, ZA, ZM, ZW only).
SUGAWA, Shigetoshi [JP/JP]; (JP) (For US Only).
HIRAYAMA, Masaki [JP/JP]; (JP) (For US Only).
GOTO, Tetsuya [JP/JP]; (JP) (For US Only)
Inventors: OHMI, Tadahiro; (JP).
SUGAWA, Shigetoshi; (JP).
HIRAYAMA, Masaki; (JP).
GOTO, Tetsuya; (JP)
Agent: ITOH, Tadahiko; 32nd Floor, Yebisu Garden Place Tower, 20-3, Ebisu 4-chome, Shibuya-ku, Tokyo 150-6032 (JP)
Priority Data:
2001-205171 05.07.2001 JP
Title (EN) SUBSTRATE TREATING DEVICE AND SUBSTRATE TREATING METHOD, SUBSTRATE FLATTENING METHOD
(FR) DISPOSITIF DE TRAITEMENT DE SUBSTRAT ET PROCEDE DE TRAITEMENT DE SUBSTRAT, PROCEDE D'APLANISSEMENT
Abstract: front page image
(EN)A substrate treating device comprising a treating space provided with a holding table for holding an untreated substrate, a hydrogen catalyst member disposed in the treating space so as to face the untreated substrate, for decomposing hydrogen molecules into hydrogen radicals H*, and a gas supply port provided on the side facing the untreated substrate of the hydrogen catalyst member in the treating space, for introducing a treating gas containing at least hydrogen gas, wherein the distance between the hydrogen catalyst member and the untreated substrate on the holding table is set to be within the hydrogen radial H* reaching distance.
(FR)L'invention se rapporte à un dispositif de traitement de surface comportant une zone de traitement pourvue d'une table de support afin de soutenir un substrat non traité, un élément catalyseur d'hydrogène disposé dans la zone de traitement de manière à faire face à au substrat non traité et servant à décomposer les molécules d'hydrogène en radicaux H* hydrogène, et un port d'alimentation en gaz installé sur le côté faisant face au substrat non traité de l'élément catalyseur d'hydrogène dans la zone de traitement et servant à introduire un gaz de traitement contenant au moins un gaz hydrogène, la distance entre le membre catalyseur d'hydrogène et le substrat non traité sur la table de support est réglée de manière à se trouver près du radical H* hydrogène.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, OM, PH, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VN, YU, ZA, ZM, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)