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1. (WO2003003476) MICROELECTRONIC DEVICE AND METHOD OF ITS MANUFACTURE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2003/003476 International Application No.: PCT/IE2002/000074
Publication Date: 09.01.2003 International Filing Date: 05.06.2002
Chapter 2 Demand Filed: 15.11.2002
IPC:
H01L 31/107 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101
Devices sensitive to infra-red, visible or ultra-violet radiation
102
characterised by only one potential barrier or surface barrier
107
the potential barrier working in avalanche mode, e.g. avalanche photodiode
Applicants: MATHEWSON, Alan[GB/IE]; IE (UsOnly)
MORRISON, Alan[IE/IE]; IE (UsOnly)
JACKSON, John, Carlton[US/US]; US (UsOnly)
NATIONAL MICROELECTRONIC RESEARCH CENTRE[IE/IE]; University College Cork Lee Maltings Prospect Row Cork, IE (AllExceptUS)
Inventors: MATHEWSON, Alan; IE
MORRISON, Alan; IE
JACKSON, John, Carlton; US
Agent: BOYCE, Conor ; F R Kelly & Co. 27 Clyde Road Ballsbridge Dublin 4, IE
Priority Data:
S01061628.06.2001IE
Title (EN) MICROELECTRONIC DEVICE AND METHOD OF ITS MANUFACTURE
(FR) DISPOSITIF MICRO-ELECTRONIQUE ET PROCEDE DE FABRICATION ASSOCIE
Abstract:
(EN) A photodiode structure operable in Geiger mode is disclosed. The photodiode includes an effective area that comprises a multiplicity of high-field regions, each constituting a diode element at which avalanche multiplication can occur. The high-field regions are sized and spaced apart by low-field regions in the surrounding substrate. During manufacture, defects and contaminants are removed from the high-field regions into the surrounding low-field regions by gettering. The size of the high-field regions is chosen to ensure that the gettering process is effective. For example, they may be approximately 10mm in diameter. The spacing between the high-field regions is large enough to accommodate the gettered defects and contaminants in order that they have a minimal effect on the dark count of the photodiode.
(FR) L'invention concerne une structure de photodiode pouvant fonctionner en mode Geiger. Cette photodiode comprend une zone efficace qui comprend plusieurs régions à champ d'intensité élevée, chacune constituant un élément de diode au niveau duquel un effet d'avalanche peut se produire. Les régions à champ d'intensité élevée sont dimensionnées et séparées par des régions à champ de faible intensité dans le substrat avoisinant. Durant la fabrication, des défauts et des contaminants sont éliminés des régions à champ d'intensité élevée et déplacés dans les régions à champ de faible intensité par fixation des gaz. La taille des régions à champ d'intensité élevée est choisie de manière à assurer que le processus de fixation des gaz soit efficace. Par exemple, ces régions peuvent avoir un diamètre d'environ 10mm. L'espacement entre les régions à champ d'intensité élevée est suffisamment grand pour loger les défauts et contaminants fixés de façon que ces derniers aient un effet minimum sur le bruit de comptage de la photodiode.
front page image
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, OM, PH, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)