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Machine translation
1. (WO2003002301) END POINT DETECTION SYSTEM FOR CHEMICAL MECHANICAL POLISHING APPLICATIONS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2003/002301    International Application No.:    PCT/US2001/020283
Publication Date: 09.01.2003 International Filing Date: 26.06.2001
Chapter 2 Demand Filed:    15.01.2002    
IPC:
B24B 21/04 (2006.01), B24B 1/00 (2006.01), B24B 37/015 (2012.01), B24B 49/14 (2006.01), H01L 21/304 (2006.01), H01L 21/66 (2006.01)
Applicants: LAM RESEARCH CORPORATION [US/US]; 4650 Cushing Parkway Fremont, CA 94568 (US).
MIKHAYLICH, Katrina, A. [RU/US]; (US) (For US Only).
RAVKIN, Mike [US/US]; (US) (For US Only).
GOTKIS, Yehiel [IL/US]; (US) (For US Only)
Inventors: MIKHAYLICH, Katrina, A.; (US).
RAVKIN, Mike; (US).
GOTKIS, Yehiel; (US)
Agent: PENILLA, Albert, S.; Martine & Penilla, LLP 710 Lakeway Drive, Suite 170 Sunnyvale, CA 94085 (US)
Priority Data:
Title (EN) END POINT DETECTION SYSTEM FOR CHEMICAL MECHANICAL POLISHING APPLICATIONS
(FR) SYSTEME DE DETECTION DE POINT D'EXTREMITE POUR APPLICATIONS DE POLISSAGE MECANO-CHIMIQUE
Abstract: front page image
(EN)Chemical mechanical polishing systems and methods are disclosed. The system includes a polishing pad (304) that is configured to move from a first point to a second point. A carrier (308) is also included and is configured to hold a substrate (301) to be polished over the polishing pad. The carrier is designed to apply the substrate to the polishing pad in a polish location that is between the first point and the second point. A first sensor (310a) is located at the first point and oriented so as to sense an IN temperature of the polishing pad, and a second sensor (310b) is located at the second point and oriented so as to sense an OUT temperature of the polishing pad. The sensing of the IN and OUT temperatures is configured to produce a temperature differential that allows monitoring the process state and the state of the water surface for purposes of switching the process steps while processing wafers by chemical mechanical planarization.
(FR)Cette invention concerne des systèmes et des procédés de polissage mécano-chimiques. Le système comprend un tampon à polir (304) conçu pour se déplacer entre un premier et un second point ainsi qu'un élément porteur (308) conçu pour maintenir un substrat (301) destiné à être poli sur ledit tampon. Le support sert à appliquer le substrat sur le tampon à polir en un emplacement de polissage situé entre le premier et le second point. Un premier détecteur (310a)situé au niveau du premier point est orienté de manière à détecter la température D'ENTREE du tampon à polir, et un second détecteur (310b) situé au niveau du second point est orienté pour détecter la température de SORTIE du tampon à polir. La détection des températures D'ENTREE et de SORTIE doit produire un différentiel de température qui permet de contrôler l'état de travail et l'état de surface de la tranche pendant le travail de planarisation mécano-chimique.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, TZ, UA, UG, US, UZ, VN, YU, ZA, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)