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1. (WO2002080287) SEMICONDUCTOR STRUCTURES AND DEVICES FOR DETECTING FAR-INFRARED LIGHT
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2002/080287 International Application No.: PCT/US2001/048088
Publication Date: 10.10.2002 International Filing Date: 10.12.2001
IPC:
H01L 21/20 (2006.01) ,H01L 21/36 (2006.01) ,H01L 29/76 (2006.01) ,H01L 29/94 (2006.01) ,H01L 31/062 (2006.01) ,H01L 31/09 (2006.01) ,H01L 31/101 (2006.01) ,H01L 31/113 (2006.01) ,H01L 31/119 (2006.01) ,H01L 31/18 (2006.01) ,H01L 33/00 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34
the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
36
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
92
Capacitors with potential-jump barrier or surface barrier
94
Metal-insulator-semiconductors, e.g. MOS
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
06
characterised by at least one potential-jump barrier or surface barrier
062
the potential barriers being only of the metal-insulator-semiconductor type
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
09
Devices sensitive to infra-red, visible or ultra- violet radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101
Devices sensitive to infra-red, visible or ultra-violet radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101
Devices sensitive to infra-red, visible or ultra-violet radiation
112
characterised by field-effect operation, e.g. junction field-effect photo- transistor
113
being of the conductor-insulator- semiconductor type, e.g. metal- insulator-semiconductor field-effect transistor
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
115
Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
119
characterised by field-effect operation, e.g. MIS type detectors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Applicants:
MOTOROLA, INC., A CORPORATION OF THE STATE OF DELAWARE [US/US]; 1303 East Algonquin Road Schaumburg, IL 60196, US
Inventors:
DROOPAD, Ravindranath; US
Agent:
KOCH, William, E.; 3102 North 56th Street AZ11/56-238 Phoenix, AZ 85018-6606, US
Priority Data:
09/822,49930.03.2001US
Title (EN) SEMICONDUCTOR STRUCTURES AND DEVICES FOR DETECTING FAR-INFRARED LIGHT
(FR) STRUCTURES A SEMI-CONDUCTEURS ET DISPOSITIFS DE DETECTION DE LUMIERE INFRAROUGE LOINTAINE
Abstract:
(EN) High-quality epitaxial layers of narrow-bandgap monocrystalline semiconductor materials can be grown overlying monocrystalline substrates (22), such as large silicon wafers, by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing a monocrystalline oxide layer (24) on a silicon wafer. The oxide layer may be spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer (28) dissipates strain and permits the growth of a high-quality monocrystalline oxide layer. The oxide layer (24) is lattice-matched to both the underlying silicon wafer and the overlying monocrystalline semiconductor material layer (26). Any lattice mismatch between the oxide layer (24) and the underlying silicon substrate (22) is relieved by the amorphous interface layer (28). Optical structures, such as far-infrared detectors and emitters, can be grown on high-quality, epitaxial, narrow-bandgap compound semiconductor materials to create highly reliable devices at reduced costs.
(FR) Selon ce procédé, on peut étirer des couches épitaxiales de haute qualité de matériaux semi-conducteurs monocristallins à largeur de bande interdite étroite pour recouvrir des substrats monocristallins (22) tels que de grandes plaques de silicium en formant un substrat adapté pour y étirer les couches monocristallines. Selon une réalisation, pour former un substrat adapté, le procédé consiste à étirer d'abord une couche d'oxyde monocristallin sur une plaque de silicium. La couche d'oxyde peut être espacée de la plaque de silicium par une couche d'interface amorphe (28) d'oxyde de silicium. La couche d'interface amorphe (28) dissipe la déformation et permet l'étirement de la couche d'oxyde monocristallin de haute qualité. La couche d'oxyde (24) est alignée dans l'axe cristallographique sur la plaque de silicium sous-jacente et sur la couche supérieure de matériau semi-conducteur monocristallin (26). La couche d'interface amorphe (28) permet de remédier au décalage de l'axe cristallographique entre la couche d'oxyde (24) et le substrat de silicium sous-jacent (22). Il est possible d'étirer des structures optiques telles que des détecteurs et émetteurs infrarouges lointains sur des matériaux semi-conducteurs composés à largeur de bande interdite étroite, épitaxiaux, de haute qualité, dans la fabrication à faibles coûts de dispositifs extrêmement fiables.
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, PH, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, TZ, UA, UG, UZ, VN, YU, ZA, ZW
African Regional Intellectual Property Organization (ARIPO) (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)