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1. (WO2002080183) MEMORY CELL STRUCTURAL TEST
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2002/080183 International Application No.: PCT/US2002/007340
Publication Date: 10.10.2002 International Filing Date: 08.03.2002
Chapter 2 Demand Filed: 29.10.2002
IPC:
G11C 29/02 (2006.01) ,G11C 29/50 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
29
Checking stores for correct operation; Testing stores during standby or offline operation
02
Detection or location of defective auxiliary circuits, e.g. defective refresh counters
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
29
Checking stores for correct operation; Testing stores during standby or offline operation
04
Detection or location of defective memory elements
50
Marginal testing, e.g. race, voltage or current testing
Applicants:
INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, CA 95052, US
Inventors:
TRIPP, Michael; US
MAK, Tak; US
SPICA, Michael; US
Agent:
MALLIE, Michael, J.; Blakely, Sokoloff, Taylor & Zafman 7th floor 12400 Wilshire Boulevard Los Angeles, CA 90025 , US
Priority Data:
09/823,64230.03.2001US
Title (EN) MEMORY CELL STRUCTURAL TEST
(FR) TEST STRUCTUREL DE CELLULES MEMOIRE
Abstract:
(EN) An apparatus and method for testing memory cells comprising coupling a first and a second memory cell to a first and a second bit lines, respectively, reading data from the first and second memory cells through the first and second bit lines, and comparing the voltage levels of the first and second bit lines.
(FR) L'invention concerne un appareil et un procédé pour tester les cellules mémoire. Ce procédé consiste d'abord à coupler une première et une seconde cellule mémoire à une première et une seconde ligne de bits, à lire ensuite les données à partir des première et seconde cellules mémoire dans les première et seconde lignes de bits, puis, à comparer les niveaux de tensions des première et seconde lignes de bits.
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, OM, PH, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TN, TR, TT, TZ, UA, UG, UZ, VN, YU, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)