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1. (WO2002067319) COPPER INTERCONNECT STRUCTURE HAVING DIFFUSION BARRIER
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2002/067319 International Application No.: PCT/US2001/047592
Publication Date: 29.08.2002 International Filing Date: 05.12.2001
Chapter 2 Demand Filed: 27.06.2002
IPC:
H01L 21/285 (2006.01) ,H01L 21/768 (2006.01) ,H01L 23/532 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283
Deposition of conductive or insulating materials for electrodes
285
from a gas or vapour, e.g. condensation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
52
Arrangements for conducting electric current within the device in operation from one component to another
522
including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
532
characterised by the materials
Applicants:
ASM INTERNATIONAL N.V. [NL/NL]; Jan Van Eycklaan 10 NL-3723 BC Bilthoven, NL (UsOnly)
KIM, Ki-Bum [KR/KR]; KR (UsOnly)
RAAIJMAKERS, Ivo [NL/NL]; NL (UsOnly)
SOININEN, Pekka, J. [FI/FI]; FI (UsOnly)
Inventors:
KIM, Ki-Bum; KR
RAAIJMAKERS, Ivo; NL
SOININEN, Pekka, J.; FI
Agent:
DELANEY, Karoline, A.; Knobbe, Martens, Olson & Bear, LLP 620 Newport Center Drive, 16th Floor Newport Beach, CA 92660, US
ARAI, Katsuhiro; Knobbe, Martens, Olson & Bear, LLP 620 Newport Center Drive, 16th Floor Newport Beach, CA 92660, US
Priority Data:
2000/007402506.12.2000KR
Title (EN) COPPER INTERCONNECT STRUCTURE HAVING DIFFUSION BARRIER
(FR) STRUCTURE D'INTERCONNEXION EN CUIVRE POSSEDANT UNE BARRIERE DE DIFFUSION SOUDEE
Abstract:
(EN) The present invention provides a method of fabricating a semiconductor device, which could advance the commercialization of semiconductor devices with a copper interconnect. In a process of metal interconnect line fabrication, a TiN thin film (32) combined with an Al intermediate layer (34) is used as a diffusion barrier on trench or via walls. For the formation, Al is deposited on the TiN thin film followed by copper filling the trench. Al diffuses to TiN layer and reacts with oxygen or nitrogen, which will stuff grain boundaries efficiently, thereby blocking the diffusion of copper successfully.
(FR) L'invention concerne un procédé de fabrication d'un dispositif à semi-conducteurs, lequel pourrait faire avancer la commercialisation de dispositifs à semi-conducteurs avec une interconnexion en cuivre. Dans un processus de fabrication de ligne d'interconnexion métallique, un film fin de nitrure de titane (TiN) combiné à une couche intermédiaire d'aluminium (Al) est utilisé en tant que barrière de diffusion sur une tranchée ou des parois de trou d'interconnexion. Pour la formation, Al est déposé sur le film fin de TiN et cette opération est suivie du remplissage de la tranchée avec le cuivre. Al diffuse dans la couche de TiN et réagit avec l'oxygène ou le nitrogène, ce qui soude efficacement les joints de grains, bloquant ainsi avec succès la diffusion du cuivre.
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, PH, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, TZ, UA, UG, US, UZ, VN, YU, ZA, ZW
African Regional Intellectual Property Organization (ARIPO) (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)