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1. WO2002059941 - A SELF-ALIGNED CROSS-POINT MRAM DEVICE WITH ALUMINUM METALLIZATION LAYERS

Publication Number WO/2002/059941
Publication Date 01.08.2002
International Application No. PCT/US2002/001923
International Filing Date 24.01.2002
Chapter 2 Demand Filed 22.08.2002
IPC
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02
using magnetic elements
14
using thin-film elements
15
using multiple magnetic layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
8239
Memory structures
8246
Read-only memory structures (ROM)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
22
including components using galvano-magnetic effects, e.g. Hall effect; using similar magnetic field effects
G11C 11/15 (2006.01)
H01L 21/8246 (2006.01)
H01L 27/22 (2006.01)
CPC
B82Y 10/00
G11C 11/15
G11C 11/161
G11C 11/56
H01L 27/222
Applicants
  • INFINEON TECHNOLOGIES AG [DE/DE]; St. Martin Str.53 81669 Munich, DE
Inventors
  • NING, Xian, J.; US
Agents
  • BRADEN, Stanton, C. ; Siemens Corporation - Intellectual Property Dept. 186 Wood Ave. South Iselin, NJ 08830, US
  • EPPING HERMANN & FISCHER; Postfach 12 10 26 80034 München, DE
Priority Data
09/797,24501.03.2001US
60/263,99224.01.2001US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) A SELF-ALIGNED CROSS-POINT MRAM DEVICE WITH ALUMINUM METALLIZATION LAYERS
(FR) MRAM A POINTS DE CONTACT AUTO-ALIGNES ET A COUCHES DE METALLISATION D'ALUMINIUM
Abstract
(EN)
An MRAM device (160) and manufacturing process thereof having aluminum conductive lines (134) and (152), with self-aligning cross-points. Conductive lines (134) and metal stack (138) are patterned in a single patterning step and etched. Conductive lines (152) positioned orthogonally to conductive lines (134) are patterned simultaneously with the patterning of metal stack (138) and are etched. The metal stack (138) serves as an anti-reflective coating for conductive lines (152) during the etching process. A multi-level MRAM device may be manufactured in accordance with an embodiment of the invention.
(FR)
L'invention porte sur une MRAM (160) (mémoire magnétique à accès aléatoire) à conducteurs d'aluminium (134) et (152), et à points de contact à auto-alignement, et sur son procédé d'élaboration selon lequel les conducteurs d'aluminium (134) et les empilements métalliques sont dessinés en une seule étapes puis gravés. Les conducteurs (152) perpendiculaires aux conducteurs (134) sont dessinés en même temps que les empilements métalliques, puis sont gravés. Les empilements métalliques (138) servent de revêtement antireflets des conducteurs (152) pendant la gravure. L'invention porte également sur une MRAM à plusieurs niveaux fabriquée selon une des exécutions dudit procédé.
Also published as
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