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1. WO2002058160 - SEMICONDUCTOR DEVICE

Publication Number WO/2002/058160
Publication Date 25.07.2002
International Application No. PCT/JP2001/000373
International Filing Date 19.01.2001
IPC
H01L 29/06 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/417 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
41characterised by their shape, relative sizes or dispositions
417carrying the current to be rectified, amplified or switched
H01L 29/45 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
43characterised by the materials of which they are formed
45Ohmic electrodes
H01L 29/739 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70Bipolar devices
72Transistor-type devices, i.e. able to continuously respond to applied control signals
739controlled by field effect
CPC
H01L 21/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
H01L 29/402
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
402Field plates
H01L 29/407
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
402Field plates
407Recessed field plates, e.g. trench field plates, buried field plates
H01L 29/41741
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
41characterised by their shape, relative sizes or dispositions
417carrying the current to be rectified, amplified or switched
41725Source or drain electrodes for field effect devices
41741for vertical or pseudo-vertical devices
H01L 29/456
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
43characterised by the materials of which they are formed
45Ohmic electrodes
456on silicon
H01L 29/7395
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
70Bipolar devices
72Transistor-type devices, i.e. able to continuously respond to applied control signals
739controlled by field-effect, ; e.g. bipolar static induction transistors [BSIT]
7393Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
7395Vertical transistors, e.g. vertical IGBT
Applicants
  • MITSUBISHI DENKI KABUSHIKI KAISHA [JP]/[JP] (AllExceptUS)
  • NAKAMURA, Katsumi [JP]/[JP] (UsOnly)
  • KUSUNOKI, Shigeru [JP]/[JP] (UsOnly)
  • NAKAMURA, Hideki [JP]/[JP] (UsOnly)
Inventors
  • NAKAMURA, Katsumi
  • KUSUNOKI, Shigeru
  • NAKAMURA, Hideki
Agents
  • FUKAMI, Hisao
Priority Data
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF A SEMI-CONDUCTEUR
Abstract
(EN) A semiconductor device comprises an insulated-gate field effect transistor section including an n-type emitter area (3) and an n- silicon substrate (1) opposed across a p-type body area (2), and a gate electrode (5a) opposed across a gate insulator (4a) in the p-type body area (2). The semiconductor device further comprises a stabilizer plate (5b) consisting a conductor or a semiconductor, which is opposed to the n- silicon substrate (1) across a plate insulator (4, 4b) to form a capacitor between the stabilizer plate and the n- silicon substrate (1). The stabilizer plate capacitance between the stabilizer plate (5b) and the n- silicon substrate (1) is greater than the gate-drain capacitance between the gate electrode (5a) and the n- silicon substrate (1).
(FR) L'invention concerne un dispositif à semi-conducteur comprenant une partie de transistor à effet de champ à grille isolée pourvu d'une zone émetteur de type n (3) et un substrat en silicium n (1) faisant face à une zone de corps de type p (2) et une électrode de grille (5a) faisant face à un isolateur (4a) de grille dans la zone de corps de type p (2). Le dispositif à semi-conducteur comprend, en outre, une plaque stabilisatrice (5b) consistant en un conducteur ou un semi-conducteur, qui fait face au substrat en silicium n (1) en parallèle avec un isolateur de plaque (4, 4b) afin de former un condensateur entre la plaque stabilisatrice (5b) et le substrat en silicium n (1). La capacité de la plaque stabilisatrice entre la plaque stabilisatrice (5b) et le substrat en silicium n (1) est supérieure à la capacité grille-drain entre l'électrode de grille (5a) et le substrat en silicium n (1).
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