H | ELECTRICITY |
01 | BASIC ELECTRIC ELEMENTS |
L | SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR |
29 | Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor |
66 | Types of semiconductor device ; ; Multistep manufacturing processes therefor |
68 | controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched |
70 | Bipolar devices |
72 | Transistor-type devices, i.e. able to continuously respond to applied control signals |
739 | controlled by field-effect, ; e.g. bipolar static induction transistors [BSIT] |
7393 | Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET |
7395 | Vertical transistors, e.g. vertical IGBT |
7396 | with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions |
7397 | and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT |