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1. WO2002056355 - METHOD AND DEVICE FOR LASER ANNEALING

Publication Number WO/2002/056355
Publication Date 18.07.2002
International Application No. PCT/JP2002/000189
International Filing Date 15.01.2002
IPC
B23K 26/073 2006.1
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26Working by laser beam, e.g. welding, cutting or boring
02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
06Shaping the laser beam, e.g. by masks or multi-focusing
073Shaping the laser spot
H01S 3/00 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
CPC
B23K 26/0732
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26Working by laser beam, e.g. welding, cutting or boring
02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
06Shaping the laser beam, e.g. by masks or multi-focusing
073Shaping the laser spot
0732into a rectangular shape
G02B 27/0905
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
27Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
09Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
0905Dividing and/or superposing multiple light beams
H01L 21/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth ; solid phase epitaxy
H01S 3/005
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
005Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
H01S 3/1003
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
3Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
10007in optical amplifiers
10023by functional association of additional optical elements, e.g. filters, gratings, reflectors
1003tunable optical elements, e.g. acousto-optic filters, tunable gratings
Applicants
  • ISHIKAWAJIMA-HARIMA HEAVY INDUSTRIES CO., LTD. [JP]/[JP] (AllExceptUS)
  • SEMICONDUCTOR ENERGY LABORATORY CO., LTD. [JP]/[JP] (AllExceptUS)
  • KAWAGUCHI, Norihito [JP]/[JP] (UsOnly)
  • NISHIDA, Kenichiro [JP]/[JP] (UsOnly)
  • ISHII, Mikito [JP]/[JP] (UsOnly)
  • YAGI, Takehito [JP]/[JP] (UsOnly)
  • MASAKI, Miyuki [JP]/[JP] (UsOnly)
  • YOSHINOUCHI, Atsushi [JP]/[JP] (UsOnly)
  • TANAKA, Koichiro [JP]/[JP] (UsOnly)
Inventors
  • KAWAGUCHI, Norihito
  • NISHIDA, Kenichiro
  • ISHII, Mikito
  • YAGI, Takehito
  • MASAKI, Miyuki
  • YOSHINOUCHI, Atsushi
  • TANAKA, Koichiro
Agents
  • KINUTANI, Nobuo
Priority Data
2001-557912.01.2001JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD AND DEVICE FOR LASER ANNEALING
(FR) PROCEDE ET DISPOSITIF DE RECUIT AU LASER
Abstract
(EN) A method and a device for laser annealing capable of uniformly irradiating a beam, wherein only the beam having a Gaussian distribution excluding portions with high light-intensity can be formed in a linear sectional shape by an optical system (57) by rotating, a specified angle, the beam (41) from a laser beam source by a rotating means (42) even if a nonuniform intensity distribution is present in the beam pattern of the beam (41) from the laser beam source, whereby the beam can be irradiated uniformly to a specimen (50).
(FR) L'invention porte sur un procédé et un dispositif de recuit au laser répartissant uniformément un faisceau. Seul un faisceau provenant d'une source laser présentant une distribution gaussienne excluant les parties à forte intensité lumineuse peut prendre une forme de section linéaire. Un tel faisceau (41) laser après avoir subi une rotation d'un angle donné imprimée par le moyen de rotation (42) d'un système optique (57) se projette de manière uniforme sur un spécimen (50), même si sa structure présente une distribution non uniforme de l'intensité.
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