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1. WO2002053300 - METHOD AND APPARATUS FOR CRITICAL FLOW PARTICLE REMOVAL

Publication Number WO/2002/053300
Publication Date 11.07.2002
International Application No. PCT/US2002/000208
International Filing Date 04.01.2002
Chapter 2 Demand Filed 19.07.2002
IPC
B08B 5/02 2006.1
BPERFORMING OPERATIONS; TRANSPORTING
08CLEANING
BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
5Cleaning by methods involving the use of air flow or gas flow
02Cleaning by the force of jets, e.g. blowing-out cavities
B08B 5/04 2006.1
BPERFORMING OPERATIONS; TRANSPORTING
08CLEANING
BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
5Cleaning by methods involving the use of air flow or gas flow
04Cleaning by suction, with or without auxiliary action
G03F 1/00 2012.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
G03F 7/20 2006.1
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
H01L 21/00 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
CPC
B08B 5/02
BPERFORMING OPERATIONS; TRANSPORTING
08CLEANING
BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
5Cleaning by methods involving the use of air flow or gas flow
02Cleaning by the force of jets, e.g. blowing-out cavities
B08B 5/04
BPERFORMING OPERATIONS; TRANSPORTING
08CLEANING
BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
5Cleaning by methods involving the use of air flow or gas flow
04Cleaning by suction, with or without auxiliary action
B08B 7/0007
BPERFORMING OPERATIONS; TRANSPORTING
08CLEANING
BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
7Cleaning by methods not provided for in a single other subclass or a single group in this subclass
0007by explosions
G03F 1/82
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
1Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
68Preparation processes not covered by groups G03F1/20 - G03F1/50
82Auxiliary processes, e.g. cleaning or inspecting
G03F 7/70925
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
708Construction of apparatus, e.g. environment, hygiene aspects or materials
70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution, removing pollutants from apparatus; electromagnetic and electrostatic-charge pollution
70925Cleaning, i.e. actively freeing apparatus from pollutants
H01L 21/67028
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67028for cleaning followed by drying, rinsing, stripping, blasting or the like
Applicants
  • APPLIED MATERIALS, INC. [US]/[US]
Inventors
  • SATITPUNWAYCHA, Peter
  • HARVEY, Stefanie
  • BERA, Kallol
Agents
  • BERNSTEIN, Frank, L.
Priority Data
60/259,84304.01.2001US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) METHOD AND APPARATUS FOR CRITICAL FLOW PARTICLE REMOVAL
(FR) PROCEDE ET APPAREIL D'ELIMINATION DE PARTICULES D'ECOULEMENTS CRITIQUES
Abstract
(EN) In a substrate cleaning apparatus, particles attached to the surface of the substrate are dislodged and removed using a shock wave created by high-speed flow of a gas stream in a tube (1) or slot (2) that is juxtaposed with respect to the surface to be cleaned. The shock wave is generated in a controlled gap between the substrate and the tube (1) or slot (2). The pressure differential may result from either a reduced pressure or an increased pressure in the tube (1) or slot (2) with respect to an external pressure. With this technique, particles and process residue (from etch, CMP, etc.) may be effectively removed from the surface. The substrate may be a reticle or a semiconductor wafer, though other types of substrates, including other substrates used in semiconductor manufacturing processes, also may be cleaned.
(FR) L'invention concerne un appareil de nettoyage de substrats dans lequel les particules fixées à la surface du substrat sont délogées et éliminées au moyen d'une onde de choc créée par un écoulement à grande vitesse d'un flux gazeux dans un tube (1) ou une fente (2) juxtaposé à la surface à nettoyer. L'onde de choc est générée dans un espace régulé situé entre le substrat et le tube (1) ou la fente (2). Le différentiel de pression peut être causé soit par une pression réduite soit par une pression augmentée dans le tube (1) ou la fente (2) par rapport à une pression externe. Grâce à cette technique, des particules et des résidus de traitement (provenant de gravure, de processus chimico-mécaniques, etc.) peuvent efficacement être éliminés de la surface. Le substrat peut être un réticule ou une plaquette semi-conductrice bien que d'autres types de substrats puissent être nettoyés, dont des substrats utilisés dans des processus de fabrication de semi-conducteurs.
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