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1. (WO2002050345) SEMICONDUCTOR COMPLIANT SUBSTRATE HAVING A GRADED MONOCRYSTALLINE LAYER
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2002/050345 International Application No.: PCT/US2001/043744
Publication Date: 27.06.2002 International Filing Date: 19.11.2001
Chapter 2 Demand Filed: 09.07.2002
IPC:
H01L 21/20 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
Applicants:
MOTOROLA, INC. [US/US]; 1303 East Algonquin Road Schaumburg, IL 60196, US
Inventors:
RAMDANI, Jamal; US
HILT, Lyndee, L.; US
Agent:
KOCH, William, E. ; Motorola Labs 3102 North 56th Street AZ11/56-238 PHOENIX, AZ 85018-6606, US
Priority Data:
09/740,21918.12.2000US
Title (EN) SEMICONDUCTOR COMPLIANT SUBSTRATE HAVING A GRADED MONOCRYSTALLINE LAYER
(FR) SUBSTRAT ADAPTATIF A SEMI-CONDUCTEUR COMPORTANT UNE COUCHE MONOCRISTALLINE CALIBREE
Abstract:
(EN) High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. A monocrystalline graded layer (32), in which the lattice constant varies with the thickness of the layer, is then formed over the accommodating buffer layer, such that a lattice constant of the top of the graded layer substantially matches the lattice constant of a subsequently grown monocrystalline film.
(FR) On peut faire croître des couches épitaxiales de haute qualité à base de matériaux monocristallins sur des substrats monocristallins (22), tels que de grandes tranches de silicium, en formant un substrat adaptatif pour faire croître les couches monocristallines. Un premier moyen pour former un substrat adaptatif consiste à faire croître une couche tampon d'accueil (24) sur une tranche de silicium (22). La couche tampon d'accueil est une couche d'oxyde monocristallin séparée de la tranche de silicium par une couche d'interface amorphe (28) d'oxyde de silicium. La couche d'interface amorphe relâche la contrainte et permet de faire croître une couche tampon d'accueil de haute qualité à base d'oxyde monocristallin. La couche tampon d'accueil possède un réseau correspondant à celui de la plaquette de silicium sous-jacente et à celui de la couche de matériau monocristallin recouvrante. On peut ainsi former une couche monocristalline calibrée (32), dans laquelle la constante de réseau varie en fonction de l'épaisseur de la couche, sur la couche tampon d'accueil, de façon à ce que la constante de réseau du sommet de la couche calibrée corresponde sensiblement à la constante de réseau du film monocristallin crû ultérieurement.
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Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, PH, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, TZ, UA, UG, UZ, VN, YU, ZA, ZW
African Regional Intellectual Property Organization (ARIPO) (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)