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1. WO2002043127 - METHOD OF FORMING A SEMICONDUCTOR STRUCTURE

Publication Number WO/2002/043127
Publication Date 30.05.2002
International Application No. PCT/EP2001/014202
International Filing Date 12.11.2001
IPC
H01L 21/8247 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
8239Memory structures
8246Read-only memory structures (ROM)
8247electrically-programmable (EPROM)
H01L 27/105 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
H01L 29/51 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
43characterised by the materials of which they are formed
49Metal-insulator semiconductor electrodes
51Insulating materials associated therewith
CPC
H01L 27/105
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
H01L 27/11526
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11517with floating gate
11526characterised by the peripheral circuit region
H01L 27/11534
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11517with floating gate
11526characterised by the peripheral circuit region
11531Simultaneous manufacturing of periphery and memory cells
11534including only one type of peripheral transistor
H01L 29/511
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
43characterised by the materials of which they are formed
49Metal-insulator-semiconductor electrodes, ; e.g. gates of MOSFET
51Insulating materials associated therewith
511with a compositional variation, e.g. multilayer structures
Applicants
  • KONINKLIJKE PHILIPS ELECTRONICS N.V. [NL]/[NL]
Inventors
  • VERHAAR, Robertus, D., J.
  • VAN DER MEER, Hendrik, H.
Agents
  • DUIJVESTIJN, Adrianus, J.
Priority Data
00204131.721.11.2000EP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD OF FORMING A SEMICONDUCTOR STRUCTURE
(FR) PROCEDE DE FORMATION D'UNE STRUCTURE A SEMI-CONDUCTEUR
Abstract
(EN)
The present invention provides a method of forming a semiconductor structure (10) comprising a substrate (12) having a patterned Oxide-Nitride-Oxide (ONO) insulating layer (22) provided over a portion of the substrate (12). The invention employs an Oxide-Nitride-Silicon structure (38, 40, 42) as the basis for the ONO layer, which has the advantage that the upper silicon sub-layer (42) of the structure is resistant to damage during the photoresist stripping step of a patterning process and is then available for re-oxidizing into an oxide layer forming the upper sub-layer of the required ONO structure.
(FR)
La présente invention concerne un procédé de formation d'une structure à semi-conducteur (10), qui comprend un substrat (12) présentant une couche isolante d'oxyde-nitriture-oxyde (ONO) à motifs (22) disposée sur une partie du substrat (12). On utilise une structure en oxyde-nitriture-oxyde (38, 40, 42) comme support de la couche ONO, dont l'avantage est que la sous-couche de silicium supérieure (42) de la structure résiste à la dégradation pendant la phase de décapage d'un processus de création de motifs, et se prête donc à une réoxydation qui donne une couche oxyde formant la sous-couche supérieure de la structure ONO requise.
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