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1. WO2002043121 - BRIGHT FIELD IMAGE REVERSAL FOR CONTACT HOLE PATTERNING

Publication Number WO/2002/043121
Publication Date 30.05.2002
International Application No. PCT/US2001/046129
International Filing Date 30.10.2001
Chapter 2 Demand Filed 21.02.2002
IPC
H01L 21/311 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3105After-treatment
311Etching the insulating layers
CPC
H01L 21/31144
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3105After-treatment
311Etching the insulating layers ; by chemical or physical means
31144using masks
Applicants
  • ADVANCED MICRO DEVICES, INC. [US]/[US]
Inventors
  • LYONS, Christopher, F.
  • SUBRAMANIAN, Ramkumar
  • PLAT, Marina, V.
  • LUKANC, Todd, P.
Agents
  • RODDY, Richard, J.
Priority Data
09/716,21521.11.2000US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) BRIGHT FIELD IMAGE REVERSAL FOR CONTACT HOLE PATTERNING
(FR) INVERSION D'IMAGE EN CHAMP CLAIR POUR UNE CONFIGURATION DE TROUS DE CONTACT
Abstract
(EN)
A method of forming a small contact hole (160) uses a bright field mask (130) to form a small cylinder (140) in a positive resist layer (120) after exposure and developing. A negative resist layer (150) is formed around the small cylinder, and then etched or polished back to leave a top portion of the small cylinder exposed above the negative resist layer. The negative resist layer and the small cylinder (positive resist) are flood exposed to light, and then subject to a developer. What remains is a small contact hole (160) located where the small cylinder was previously located.
(FR)
L'invention concerne un procédé de formation d'un petit trou de contact (160), qui repose sur l'utilisation d'un masque de champ clair (130) pour former un petit cylindre (140) dans une couche de résist positive (120). Une couche de résist négative (150) est formée autour du petit cylindre puis gravée et polie pour laisser une partie supérieure du petit cylindre exposée au-dessus de la couche de résist négative. Cette dernière et le petit cylindre (résist positif) sont exposés à une lumière intense puis soumis à un révélateur. Il subsiste ensuite un petit trou de contact (160) situé à l'ancien emplacement du petit cylindre.
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