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1. WO2002041081 - METHOD FOR FORMING PATTERN AND TREATING AGENT FOR USE THEREIN

Publication Number WO/2002/041081
Publication Date 23.05.2002
International Application No. PCT/JP2001/009320
International Filing Date 24.10.2001
Chapter 2 Demand Filed 05.06.2002
IPC
G03F 7/038 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
038Macromolecular compounds which are rendered insoluble or differentially wettable
G03F 7/039 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
G03F 7/16 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
16Coating processes; Apparatus therefor
CPC
G03F 7/0382
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
038Macromolecular compounds which are rendered insoluble or differentially wettable
0382the macromolecular compound being present in a chemically amplified negative photoresist composition
G03F 7/0392
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
0392the macromolecular compound being present in a chemically amplified positive photoresist composition
G03F 7/168
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
16Coating processes; Apparatus therefor
168Finishing the coated layer, e.g. drying, baking, soaking
Applicants
  • CLARIANT INTERNATIONAL LTD. [CH]/[CH] (AllExceptUS)
  • IJIMA, Kazuyo [JP]/[JP] (UsOnly)
  • TAKANO, Yusuke [JP]/[JP] (UsOnly)
  • TANAKA, Hatsuyuki [JP]/[JP] (UsOnly)
  • FUNATO, Satoru [JP]/[JP] (UsOnly)
Inventors
  • IJIMA, Kazuyo
  • TAKANO, Yusuke
  • TANAKA, Hatsuyuki
  • FUNATO, Satoru
Agents
  • KANAO, Hiroki
Priority Data
2000-34766115.11.2000JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR FORMING PATTERN AND TREATING AGENT FOR USE THEREIN
(FR) PROCEDE DE FORMATION DE MOTIF ET AGENT DE TRAITEMENT A UTILISER DANS CE DERNIER
Abstract
(EN)
A method for forming a pattern which comprises a step of forming a chemical amplification photoresist film on a substrate, a step of applying an organic acid containing treating agent having a pH of 1.3 to 4.5 on the resist film, a step of baking the resist film, a step of selectively exposing the resist film to light, a step of baking the resist film after the exposure, a step of washing the treating agent present on the resist with water and subjecting it to spin drying, and a step of developing the resist film. The method allows, through the application of a specific treating agent to a photoresist film, the decrease of the contact angle of a developer to the resist film and the improvement of the wetability between them and the reduction of undesirable effect of a floating basic species, resulting in the formation of a pattern having a good shape.
(FR)
L'invention concerne un procédé de formation d'un motif, qui consiste à former un film de photorésist d'amplification chimique sur un substrat, à appliquer un acide organique contenant un agent de traitement possédant un pH de 1,3 à 4,5 sur le film de résist, à traiter le film de résist, à exposer sélectivement à la lumière le film de résist, à traiter le film de résist après l'exposition, à enlever par lavage avec de l'eau l'agent de traitement présent sur le résist et à le soumettre à l'essorage centrifuge, et à développer le film de résist. Ledit procédé permet, par l'application d'un agent de traitement spécifique sur un film de photorésist, la réduction de l'angle de contact d'un révélateur avec le film de résist et l'amélioration de la mouillabilité entre eux et la réduction des effets indésirables d'espèces de base flottantes, ce qui permet la formation d'un motif de forme de bonne qualité.
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