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1. WO2002039454 - MAGNETORESISTIVE MEMORY (MRAM)

Publication Number WO/2002/039454
Publication Date 16.05.2002
International Application No. PCT/EP2001/012622
International Filing Date 31.10.2001
Chapter 2 Demand Filed 16.05.2002
IPC
G11C 11/16 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
CPC
B82Y 10/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
10Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
G11C 11/16
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
H01L 27/222
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
22including components using galvano-magnetic effects, e.g. Hall effects; using similar magnetic field effects
222Magnetic non-volatile memory structures, e.g. MRAM
Applicants
  • INFINEON TECHNOLOGIES AG [DE]/[DE] (AllExceptUS)
  • FREITAG, Martin [DE]/[DE] (UsOnly)
  • HOENIGSCHMID, Heinz [DE]/[US] (UsOnly)
  • GOGL, Dietmar [DE]/[US] (UsOnly)
  • LAMMERS, Stefan [DE]/[US] (UsOnly)
Inventors
  • FREITAG, Martin
  • HOENIGSCHMID, Heinz
  • GOGL, Dietmar
  • LAMMERS, Stefan
Agents
  • BECK, Josef
Priority Data
100 55 936.010.11.2000DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) MAGNETORESISTIVER SPEICHER (MRAM)
(EN) MAGNETORESISTIVE MEMORY (MRAM)
(FR) MEMOIRE MAGNETORESISTIVE (MRAM)
Abstract
(DE)
Die Form der Zuleitungen eines aus einer Matrix von Spalten- und Zeilenzuleitungen aufgebauten Zellenfeldes einer Vielzahl von Magnet-Speicherzellen ist durch Abweichen von einem quadratischen Querschnitt der Zuleitungen derart optimiert, dass die in der Zellenfeldebene liegende Magnetfeldkomponente Bx der Schreibströme mit zunehmender Entfernung vom Kreuzungspunkt ausreichend rasch abnimmt.
(EN)
The form of the supply lines in a cell field made from a matrix of columned and lined supply lines of a plurality of magnetic memory cells is optimised by diverging from a quadratic cross-section of the supply lines so that the magnetic field component Bx of the writing currents arranged on the plane of the cell field is rapidly reduced at an increasing distance from the increasing point of intersection.
(FR)
La forme des conducteurs d'alimentation d'un champ de cellules constitué d'une matrice de conducteurs d'alimentation en colonnes et en lignes d'une pluralité de cellules mémoires magnétiques est optimisée par divergence par rapport à une section carrée des conducteurs d'alimentation, de manière que la composante de champ magnétique Bx des courants d'écriture située dans le plan de champ de cellules diminue de façon suffisamment rapide lorsque la distance par rapport au point de croisement augmente.
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