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1. WO2002038839 - CVD REACTOR COMPRISING A SUBSTRATE HOLDER ROTATABLY MOUNTED AND DRIVEN BY A GAS FLOW

Publication Number WO/2002/038839
Publication Date 16.05.2002
International Application No. PCT/EP2001/012311
International Filing Date 25.10.2001
Chapter 2 Demand Filed 23.04.2002
IPC
C23C 16/458 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
C30B 25/12 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02Epitaxial-layer growth
12Substrate holders or susceptors
CPC
C23C 16/4584
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
4582Rigid and flat substrates, e.g. plates or discs
4583the substrate being supported substantially horizontally
4584the substrate being rotated
C30B 25/12
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
02Epitaxial-layer growth
12Substrate holders or susceptors
Y10S 117/901
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
117Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
901Levitation, reduced gravity, microgravity, space
Applicants
  • AIXTRON AG [DE]/[DE] (AllExceptUS)
  • KÄPPELER, Johannes [DE]/[DE] (UsOnly)
  • WISCHMEYER, Frank [DE]/[DE] (UsOnly)
  • BERGE, Rune [SE]/[SE] (UsOnly)
Inventors
  • KÄPPELER, Johannes
  • WISCHMEYER, Frank
  • BERGE, Rune
Agents
  • GRUNDMANN, Dirk
Priority Data
100 55 182.308.11.2000DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) CVD-REAKTOR MIT VON EINEM GASSTROM DREHGELAGERTEN UND -ANGETRIEBENEN SUBSTRATHALTER
(EN) CVD REACTOR COMPRISING A SUBSTRATE HOLDER ROTATABLY MOUNTED AND DRIVEN BY A GAS FLOW
(FR) REACTEUR DE DEPOT CHIMIQUE EN PHASE VAPEUR COMPORTANT UN SUPPORT DE SUBSTRAT LOGE DE MANIERE ROTATIVE ET ENTRAINE PAR UN FLUX GAZEUX
Abstract
(DE)
Die Erfindung betrifft eine Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten, mit einer in einem Reaktorgehäuse (1) angeordneten Prozesskammer (2), deren Boden (3) mindestens einen in einer Lagerausnehmung (4) auf einem Gaspolster getragenen, durch den das Gaspolster aufrechterhalten, durch eine dem Boden zugeordneten Zuleitung (5) strömenden Gasstrom drehangetrieben Substrathalter (6) trägt, und schlägt zur technologischen Weiterbildung des Konzeptes des auf einem Gasstrom drehgelagerten Substrathalters insbesondere in einer lineardurchströmten Prozesskammer vor, dass die Lagerausnehmung (4) einem über der Austrittsöffnung (7) der Zuleitung (5) angeordneten Tablett (8) zugeordnet ist.
(EN)
The invention relates to a device for depositing layers, particularly crystalline layers, onto substrates. Said device comprises a process chamber (2) arranged in a reactor housing (1) where the floor (3) thereof, comprises at least one substrate holder (6) which is rotatably driven by a gas flow flowing in a feed pipe (5) associated with said floor. Said substrate holder is disposed in a bearing cavity (4) on a gas cushion and held in place thereby. The aim of the invention is to technologically improve the design of a substrate holder which is rotatably mounted in a gas flow, particularly in a linear cross-flowing process chamber. Said bearing cavity (4) is associated with a tray-shaped element (8) arranged below the outflow (7) of the feed pipe (5).
(FR)
L'invention concerne un dispositif de dépôt de couches notamment cristallines sur des substrats notamment cristallins. Ledit dispositif comporte une chambre de procédé (2) logée dans un boîtier de réacteur (1), dont le fond (3) porte au moins un support de substrat (6) entraîné de manière rotative par un flux gazeux s'écoulant au travers d'une conduite d'amenée (5) affectée audit fond, ledit support de substrat étant logé dans une cavité de logement (4) sur un matelas de gaz maintenu par ledit flux gazeux. L'invention vise à améliorer un tel support de substrat logé de manière rotative sur un flux gazeux, notamment dans une chambre de procédé parcourue linéairement. A cet effet, la cavité de logement (4) est affectée à une tablette (8) logée au dessus de l'ouverture de sortie (7) de la conduite d'amenée (5).
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