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1. WO2002035608 - IMPLANTED HIDDEN INTERCONNECTIONS IN A SEMICONDUCTOR DEVICE FOR PREVENTING REVERSE ENGINEERING

Publication Number WO/2002/035608
Publication Date 02.05.2002
International Application No. PCT/US2001/015195
International Filing Date 11.05.2001
Chapter 2 Demand Filed 26.04.2002
IPC
H01L 21/74 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
74Making of buried regions of high impurity concentration, e.g. buried collector layers, internal connections
H01L 27/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
CPC
H01L 21/743
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
74Making of ; localized; buried regions, e.g. buried collector layers, internal connections ; substrate contacts
743Making of internal connections, substrate contacts
H01L 27/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
Applicants
  • HRL LABORATORIES, LLC. [US]/[US] (AllExceptUS)
  • CLARK, William, M., Jr. [US]/[US] (UsOnly)
  • BAUKUS, James, P. [US]/[US] (UsOnly)
  • CHOW, Lap-Wai [US]/[US] (UsOnly)
Inventors
  • CLARK, William, M., Jr.
  • BAUKUS, James, P.
  • CHOW, Lap-Wai
Agents
  • BERG, Richard, P.
Priority Data
09/696,82625.10.2000US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) IMPLANTED HIDDEN INTERCONNECTIONS IN A SEMICONDUCTOR DEVICE FOR PREVENTING REVERSE ENGINEERING
(FR) IMPLANTATION D'INTERCONNEXION CAMOUFLEE DANS UN DISPOSITIF A SEMICONDUCTEUR POUR EMPECHER LE FONCTIONNEMENT INVERSE
Abstract
(EN)
A camouflaged interconnection for interconnecting two spaced-apart implanted regions of a common conductivity type in an integrated circuit or device and a method of forming same. The camouflaged interconnection comprises a first implanted region forming a conducting channel between the two spaced-apart implanted regions, the conducting channel being of the same common conductivity type and bridging a region between the two spaced-apart regions, and a second implanted region of opposite conductivity to type, the second implanted region being disposed between the two spaced-apart implanted regions of common conductivity type and over lying the conducting channel to camouflage the conducting channel from reverse engineering.
(FR)
L'invention concerne une interconnexion camouflée reliant deux implantations espacées, de conductivité identique, dans un circuit intégré ou dispositif de ce type, et un procédé d'élaboration. L'interconnexion comprend une première zone implantée formant un canal conducteur entre les deux implantations susmentionnées, ayant la même conductivité, et couvrant un espace entre ces deux implantations. Elle comprend une seconde zone implantée, de conductivité opposée, entre les deux implantations considérées, couvrant le canal conducteur pour masquer celui-ci et prévenir tout fonctionnement inverse.
Also published as
DE10196819
GBGB0309201.2
Latest bibliographic data on file with the International Bureau