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Machine translation
1. (WO2002031884) NONPLANAR SEMICONDUCTOR DEVICES HAVING CLOSED REGION OF SPATIAL CHARGE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2002/031884    International Application No.:    PCT/RU2001/000409
Publication Date: 18.04.2002 International Filing Date: 11.10.2001
Chapter 2 Demand Filed:    13.05.2002    
IPC:
H01L 29/732 (2006.01), H01L 29/74 (2006.01), H01L 29/864 (2006.01), H01L 47/02 (2006.01)
Applicants: KOZHITOV, Lev Vasilievich [RU/RU]; (RU).
KONDRATENKO, Timofei Yakovlevich [RU/RU]; (RU).
KRAPUKHIN, Vsevolod Valerievich [RU/RU]; (RU).
KONDRATENKO, Timofei Timofeevich [RU/RU]; (RU).
MISHAKIN, Nikolai Ivanovich [RU/RU]; (RU).
TIMOSHINA, Galina Georgievna [RU/RU]; (RU)
Inventors: KOZHITOV, Lev Vasilievich; (RU).
KONDRATENKO, Timofei Yakovlevich; (RU).
KRAPUKHIN, Vsevolod Valerievich; (RU).
KONDRATENKO, Timofei Timofeevich; (RU).
MISHAKIN, Nikolai Ivanovich; (RU).
TIMOSHINA, Galina Georgievna; (RU)
Agent: RAIKOVA, Tatyana Vladimirovna; MISiS, otdel zaschity promyshlennoi sobstvennosti Leninsky prospekt, 4 Moscow, 117936 (RU)
Priority Data:
2000125500 11.10.2000 RU
2000125498 11.10.2000 RU
2000129625 28.11.2000 RU
2000129626 28.11.2000 RU
Title (EN) NONPLANAR SEMICONDUCTOR DEVICES HAVING CLOSED REGION OF SPATIAL CHARGE
(FR) DISPOSITIFS SEMI-CONDUCTEURS NON PLANS POSSEDANT UNE REGION FERMEE DE CHARGE SPATIALE
Abstract: front page image
(EN)The invention relates to the electronic technology, in particular to design and a production of nonplanar semiconductor devices having a closed region of a spatial charge and can be used in the electronic industry for circuits amplifying, generating and transforming electromagnetic oscillations into other type of oscillations. Said invention makes it possible to produce the semiconductor devices having the higher reliability at nominal values of operating currents and voltages, exclude the edge effect and reduce the level of the electrothermal and thermo-electromagnetic degradation. The formation of the closed region of the spatial charge is demonstrated with the aid of the following nonplanar semiconductor devices: a bipolar transistors, a thyristor, an avalanche diode, a Gunn diode and variants thereof.
(FR)L'invention concerne le domaine de l'électronique, notamment la conception et la production de dispositifs semi-conducteurs non plans possédant une région fermée de charge spatiale et pouvant être utilisés dans l'industrie électronique dans des circuits d'amplification, génération et transformation d'oscillations électromagnétiques et autres types d'oscillations. Selon cette invention, il est possible de produire des dispositifs semi-conducteurs d'une plus haute fiabilité à des valeurs nominales de courants et de tensions utiles, d'éliminer les effets de bord et de réduire également le niveau de dégradation électrothermique et thermomagnétique. La formation d'une région fermée de charge spatiale s'avère, par conséquent, utile dans les dispositifs semi-conducteurs non plans tels que transistors bipolaires, thyristors, diodes à avalanche, diodes à effet Gunn et des variantes de ceux-ci.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, TZ, UA, UG, US, UZ, VN, YU, ZA, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Russian (RU)
Filing Language: Russian (RU)