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Pub. No.:    WO/2002/031863    International Application No.:    PCT/IE2001/000128
Publication Date: 18.04.2002 International Filing Date: 11.10.2001
Chapter 2 Demand Filed:    10.05.2002    
H01S 5/02 (2006.01), H01S 5/10 (2006.01), H01S 5/22 (2006.01), H01S 5/40 (2006.01)
Applicants: NATIONAL UNIVERSITY OF IRELAND, CORK [IE/IE]; Lee Maltings, Prospect Row, Cork (IE) (For All Designated States Except US).
CORBETT, Brian, Michael [IE/IE]; (IE) (For US Only)
Inventors: CORBETT, Brian, Michael; (IE)
Agent: CURLEY, Donnacha, John; Tomkins & Co., 5 Dartmouth Road, Dublin 6 (IE)
Priority Data:
S 2000/0820 11.10.2000 IE
Abstract: front page image
(EN)This invention relates to generally to semiconductor devices, for example lasers and more particularly to single frequency lasers and is directed at overcoming problems associated with the manufacture of these devices. In particular, a laser device is provided formed on a substrate having a plurality of layers (1, 2, 3, 4, 5), the laser device comprising at least one waveguide (for example a ridge) established by the selective removal of sections of at least one of the layers. The ridge (100, 101) has at least one defect defining region (104), the at least one defect defining region of the ridge defining a defect in the ridge. The width of the ridge is greater in the at least one defect defining region of the ridge than in adjacent sections of the ridge.
(FR)L'invention concerne des appareils semi-conducteurs, par exemple, des lasers et en particulier des lasers monofréquence et permet de surmonter des problèmes associés à la fabrication de ces appareils. En particulier, un appareil laser formé sur un substrat possédant plusieurs couches (1, 2, 3, 4, 5), l'appareil laser comportant au moins un guide d'onde (par exemple, saillie) établi grâce au retrait sélectif de sections d'au moins une des couches. La saillie (100, 101) présente au moins une zone définie par défaut (104), cette zone au moins définie par défaut de la saillie définissant un défaut dans la saillie. La largeur de la saillie est supérieure, dans au moins une zone définie par défaut de la saillie, aux sections adjacentes de la saillie.
Designated States: AE, AG, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DZ, EC, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, MZ, NO, NZ, PH, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, TZ, UA, UG, US, UZ, VN, YU, ZA, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, MZ, SD, SL, SZ, TZ, UG, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)