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Machine translation
1. (WO2002029901) THIN FILM TRANSISTOR, LIQUID CRYSTAL DISPLAY DEVICE COMPRISING IT, AND ELECTROLUMINESCENCE DISPLAY DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2002/029901    International Application No.:    PCT/JP2001/007459
Publication Date: 11.04.2002 International Filing Date: 30.08.2001
Chapter 2 Demand Filed:    31.01.2002    
IPC:
H01L 21/336 (2006.01), H01L 29/49 (2006.01), H01L 29/786 (2006.01)
Applicants: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. [JP/JP]; 1006, Oaza Kadoma Kadoma-shi, Osaka 571-8501 (JP) (For All Designated States Except US).
KITAMURA, Kazuki [JP/JP]; (JP) (For US Only).
KAWAKITA, Tetsuo [JP/JP]; (JP) (For US Only).
SANO, Hiroshi [JP/JP]; (JP) (For US Only)
Inventors: KITAMURA, Kazuki; (JP).
KAWAKITA, Tetsuo; (JP).
SANO, Hiroshi; (JP)
Agent: SUMIDA, Yoshihiro; Arco Patent Office 3rd Fl., Bo-eki Bldg., 123-1, Higashi-machi, Chuo-ku Kobe-shi, Hyogo 650-0031 (JP)
Priority Data:
2000-300065 29.09.2000 JP
Title (EN) THIN FILM TRANSISTOR, LIQUID CRYSTAL DISPLAY DEVICE COMPRISING IT, AND ELECTROLUMINESCENCE DISPLAY DEVICE
(FR) TRANSISTOR A FIL MINCE, DISPOSITIF D'AFFICHAGE A CRISTAUX LIQUIDES COMPRENANT LEDIT FIL, ET DISPOSITIF D'AFFICHAGE ELECTROLUMINESCENT
Abstract: front page image
(EN)A thin film transistor comprises a substrate (11), an undercoat insulation film (12) formed over the substrate (11), a silicon-based semiconductor film (14) having a source region (32), a channel region (61), and a drain region (33) formed on the undercoat insulation film (12), a gate insulation film (16) adjacent to the channel region (61) of the semiconductor film (14), and a filmy gate electrode (31) adjacent to the gate insulation film (16). The sum of the inner stresses of the gate electrode (31) and the gate insulation film (16) is tensile.
(FR)L'invention concerne un transistor à fil mince comprenant un substrat (11), un film (12) de sous-couche formé sur ledit substrat (11), un film semi-conducteur (14) à base de silicium (32) possédant une région de source (32), une région de canal (61), et une région de drain (33) formées sur le film d'isolation (12) de sous-couche, un film d'isolation (16) de grille adjacent à la région de canal (61) du film semi-conducteur (14), et une électrode de grille (31) filmogène adjacente au film d'isolation (16) de grille. La somme des contraintes intérieures de l'électrode de grille (31) et du film d'isolation 16 (16) de grille est une composante de traction.
Designated States: CN, KR, SG, US.
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)